GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof

A technology of superluminescence and multiple quantum wells, which is applied in the field of third-generation semiconductor material GaN-based multi-quantum well superluminescent light-emitting diodes and its preparation, can solve the problems of low output power of GaN-based LEDs, and achieve the goal of overcoming difficulties in realization and output High power, simple preparation effect

Inactive Publication Date: 2009-11-04
JIANGXI EPITOP OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a GaN-based multi-quantum well superluminescent light-emitting diode with

Method used

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  • GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof
  • GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof
  • GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0053] Example 1

[0054] see figure 1 , the epitaxial wafer preparation method is given below:

[0055] (1) The sapphire substrate 1 of (0001) orientation no-cleaning is packed into reaction chamber, in H 2 Under atmosphere, heat to 1060°C and bake for 10 minutes, and the pressure in the reaction chamber is 500 Torr.

[0056] (2) A low-temperature GaN buffer layer with a thickness of 25nm was grown at 530°C (at figure 1 Not shown in ), the growth pressure is 300Torr, the flow rate of TMGa is 40μmol / min, NH 3 The flow rate is 80mol / min.

[0057] (3) The N-type GaN electrode contact layer 2 is grown at 1030° C., and the growth pressure is 100 Torr.

[0058] (4) 60 pairs of N-type AlGaN / GaN superlattice optical confinement layers 3 were grown at 1050° C., the growth pressure was 50 Torr, and the periodic thickness was 6 nm.

[0059] (5) The N-type GaN waveguide layer 4 is grown at 1030° C., the growth pressure is 200 Torr, and the growth thickness is 0.1 μm.

[0060] (6) ...

Example Embodiment

[0068] Example 2

[0069] The epitaxial wafer preparation method is given below:

[0070] (1) Load the (0001) orientation no-clean sapphire substrate into the reaction chamber, and 2 Under atmosphere, heat to 1060°C and bake for 10 minutes, and the pressure in the reaction chamber is 400 Torr.

[0071] (2) A low-temperature GaN buffer layer with a thickness of 30nm was grown at 550°C, the growth pressure was 400Torr, the flow rate of TMGa was 50μmol / min, and NH 3 The flow rate is 100mol / min.

[0072] (3) The N-type GaN electrode contact layer is grown at 1050° C. with a growth pressure of 150 Torr.

[0073] (4) 120 pairs of N-type AlGaN / GaN superlattice optical confinement layers were grown at 1080° C. with a growth pressure of 75 Torr and a periodic thickness of 5 nm.

[0074] (5) The N-type GaN waveguide layer is grown at 1050° C., the growth pressure is 100 Torr, and the growth thickness is 0.15 μm.

[0075] (6) Lowering the temperature and growing the InGaN / GaN multi-...

Example Embodiment

[0083] Example 3

[0084] The epitaxial wafer preparation method is given below:

[0085] (1) Load the (0001) orientation no-clean sapphire substrate into the reaction chamber, and 2 Heating to 1060° C. and baking for 10 minutes under atmosphere, and the pressure in the reaction chamber is 300 Torr.

[0086] (2) A low-temperature GaN buffer layer with a thickness of 40nm was grown at 580°C, the growth pressure was 500Torr, the flow rate of TMGa was 60μmol / min, and NH 3 The flow rate is 120mol / min.

[0087] (3) The N-type GaN electrode contact layer is grown at 1030° C., and the growth pressure is 200 Torr.

[0088] (4) 180 pairs of N-type AlGaN / GaN superlattice optical confinement were grown at 1150°C, the growth pressure was 100 Torr, and the period thickness was 4nm.

[0089] (5) The N-type GaN waveguide layer is grown at 1030° C. with a growth pressure of 150 Torr. The growth thickness was 0.1 μm.

[0090] (6) Lowering the temperature and growing the InGaN / GaN multi-q...

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Abstract

The invention provides a GaN-based multi-quantum well super light-emitting diode (SLED) with higher extraction efficiency and output power and a preparation method thereof, relating to a light-emitting diode (LED). The SLED is provided with a sapphire substrate on which a multi-layer heterostructure epitaxially grows; the multi-layer heterostructure is provided with a low-temperature GaN buffer layer, an N-type GaN electrode contact layer, an N-type AlGaN/GaN superlattice light limiting layer, an N-type GaN wave guide layer, an InGaN/GaN multi-quantum well active layer, a p-type AlGaN electron blocking layer, a p-type GaN wave guide layer, a P-type AlGaN/GaN superlattice light limiting layer, a p-type GaN layer and a p-type InGaN/AlGaN superlattice electrode contact layer; an n-type electrode is arranged on the N-type GaN electrode contact layer and a p-type electrode is arranged on the p-type InGaN/AlGaN superlattice electrode contact layer.

Description

technical field [0001] The invention relates to a light-emitting diode, in particular to a third-generation semiconductor material GaN-based multi-quantum well superluminescent light-emitting diode (Supper Light-Emitting Diodes) and a preparation method thereof. Background technique [0002] Superradiation light is obtained by spontaneously emitting photons propagating in the gain medium and undergoing a process of stimulated amplification, and the amplified spontaneous emission is called superradiation. Semiconductor superluminescent light-emitting diodes have all the characteristics of lasers (LD) and light-emitting diodes (LEDs): for traditional LEDs, their light-emitting mechanism is to emit isotropic light through the spontaneous emission of the active layer, so in the traditional rectangular There is a serious total reflection problem in the cavity structure. In theory, only 2% of the light energy escapes from the surface, resulting in low external quantum efficiency a...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 刘宝林朱丽虹
Owner JIANGXI EPITOP OPTOELECTRONICS
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