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High fidelity nano-structures and arrays for photovoltaics and methods of making the same

A technology for photovoltaic devices and structures, applied in the field of inch or occupied space limited to about 1 square millimeter, January 29, 2007, can solve the lack of nano-scale morphological and structural control, the high cost of synthesis methods, and the inability to produce uniform structural issues

Inactive Publication Date: 2009-11-04
THE UNIV OF NORTH CAROLINA AT CHAPEL HILL +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these approaches suffer from a lack of nanoscale morphology and structure control due to the immiscibility of solid-state materials as well as limited synthetic methods and high cost.
Furthermore, existing PV fabrication methods that attempt to control nanoscale morphology cannot produce the desired uniform structure and limit the overall size or footprint of photovoltaic cells to approximately 1 square millimeter and cannot be used for large-area device fabrication

Method used

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  • High fidelity nano-structures and arrays for photovoltaics and methods of making the same
  • High fidelity nano-structures and arrays for photovoltaics and methods of making the same
  • High fidelity nano-structures and arrays for photovoltaics and methods of making the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0106] Example 1 Fabrication of General (GENERIC) Polymer-Polymer BHJ PV Cells

[0107] Patterned perfluoropolyether can be produced by pouring PFPE-dimethacrylate (PFPE-DMA) containing 1-hydroxycyclohexyl phenyl ketone onto a silicon substrate patterned with 140 nm wires spaced 70 nm apart (PFPE) mold. Liquid PFPE-DMA can be confined to the desired area using a poly(dimethylsiloxane) mold.

[0108] The device can then be subjected to UV light (λ = 365 nm) for 10 minutes under a nitrogen purge. Next, the fully cured PFPE-DMA mold was released from the silicon master. Separately, ITO glass substrates were pretreated with acetone and isopropanol in an ultrasonic bath, and then cleaned with oxygen plasma for 10 min. The ITO substrate is then treated with a non-wetting silane agent and an adhesion promoter. Thereafter, the electron donor material was mixed with a photoinitiator, the sample was placed on the treated ITO substrate, and the patterned PFPE mold was placed on it. ...

Embodiment 2

[0111] Fabrication of PV cells using OVPD to obtain nanostructured BHJ's

[0112] Patterned perfluoropolyether can be produced by pouring PFPE-dimethacrylate (PFPE-DMA) containing 1-hydroxycyclohexyl phenyl ketone onto a silicon substrate patterned with 140 nm wires spaced 70 nm apart (PFPE) mold. Liquid PFPE-DMA can be confined to the desired area using a poly(dimethylsiloxane) mold.

[0113] The device was then subjected to UV light (λ = 365 nm) for 10 minutes under a nitrogen purge. Next, the fully cured PFPE-DMA mold was released from the silicon master. Separately, ITO glass substrates were pretreated with acetone and isopropanol in an ultrasonic bath, and then cleaned with oxygen plasma for 10 min. Using organic vapor phase deposition (OVPD), copper phthalocyanine (CuPc) can be deposited onto the PFPE mold to fill the features and connect each feature with a uniform layer of CuPc. The ITO substrate can then be treated with an adhesion promoter and the embossed film t...

Embodiment 3

[0115] Fabrication of 200 nm europium-doped titania structures for microelectronics

[0116] Patterned perfluoropolyether ( PFPE) mold. Liquid PFPE-DMA was confined to (=365 nm) 10 desired areas using a poly(dimethylsiloxane) mold. The device was then subjected to UV light for λ minutes under a nitrogen purge. Next, the fully cured PFPE-DMA mold was released from the silicon master. Separately, 1 g of Pluronic P123 and 0.51 g of EuCl3·6H2O were dissolved in 12 g of absolute ethanol. This solution was added to a solution of 2.7 mL of concentrated hydrochloric acid and 3.88 mL of titanium(IV) ethoxide. A flat and uniform surface was produced by treating the silicon / silicon dioxide wafer with a "piranha" solution (1:1 concentrated sulfuric acid: 30% aqueous hydrogen peroxide) and drying. Thereafter, 50 μl of the sol-gel solution was placed on the treated silicon wafer and the patterned PFPE mold was placed on it. The substrate is then placed in the molding apparatus and a s...

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Abstract

A photovoltaic device includes an electron accepting material and an electron donating material. One of the electron accepting or donating materials is configured and dimensioned as a first component of a bulk heterojunction with a predetermined array of first structures, each first structure is substantially equivalent in three dimensional shape, has a substantially equivalent cross-sectional dimension, and where each first structure of the array of first structures has a substantially equivalent orientation with respect to adjacent first structures of the predetermined array forming a substantially uniform array.

Description

[0001] Government interests [0002] This invention was made with US Government support under Agreement No. CHE-9876674 from the Office of Naval Research No. N000140210185 and the STC program of the National Science Foundation. The US Government has certain rights in this invention. [0003] Cross References to Related Applications [0004] This application is based on U.S. Provisional Patent Application Serial No. 60 / 798,858, filed May 9, 2006; U.S. Provisional Patent Application Serial No. 60 / 799,876, filed May 12, 2006; and U.S. Provisional Patent Application Serial No. 60 / 833,736, filed February 27, 2007 and claiming priority from U.S. Provisional Patent Application Serial No. 60 / 903,719; each of which is hereby incorporated by reference in its entirety . [0005] This application is also U.S. Patent Application Serial No. 10 / 583,570 filed on June 19, 2006 (which is PCT International Patent Application Serial No. PCT / US04 / 42706 filed on December 20, 2004, which entered th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/072H01L21/04H01L31/0352
CPCB82Y10/00H01L31/18H01L51/4253G03F7/0002H01L31/0352H01L51/0004H01L51/0047Y02E10/50B82Y40/00H01L51/422B82Y20/00H01L51/0036B82Y30/00Y02E10/549H10K71/13H10K85/215H10K85/113H10K30/15H10K30/35H10K30/50H01L31/032H01L31/035227H01L31/04H01L2031/0344B29C37/0003B81C99/0085B81C1/00214B29C39/36H10K30/30
Inventor J·M·德西莫内G·D·罗斯洛克Z·周E·T·萨穆斯基M·厄尔
Owner THE UNIV OF NORTH CAROLINA AT CHAPEL HILL