Doping modified phase change material and phase change storage unit containing same and preparation method thereof

A technology of phase-change memory and phase-change material, which is applied in the field of phase-change memory device unit and its preparation, phase-change material and phase-change memory device unit containing the material and its preparation field, which can solve the problems that cannot meet the actual application requirements, chip Problems such as poor data retention and low crystallization temperature are achieved to overcome the effects of poor data retention, low power consumption, and low melting point
CN101582485BActive Publication Date: 2011-02-16SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Publication Date
2011-02-16

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Abstract

The invention relates to a doping modified phase change material and a phase change storage unit containing same and preparation thereof. The formula of the doping modified phase change material is (Sb2Se3)100-xYx, wherein, x is the atom percentage of an element and is more than 0 and less than or equal to 20, and Y is a doped element and is any one of Ni, Cr, Bi, As, Ga, In, Ge, Si, Sn, Ag, Al, C, N and O. The doping modified (Sb2Se3)100-xYx storage material not only remains the advantages of the fast phase change speed and the low melting point of Sb2Se3 storage material, but also increasescrystallization temperature, thus overcoming the disadvantage of poor data retentivity of the Sb2Se3 storage material. The phase change storage containing the (Sb2Se3)100-xYx storage material has theadvantages of high speed, low power consumption and favorable data retentivity and the like.
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Description

technical field

[0001] The invention relates to a phase change material, a phase change memory device unit containing the material and a preparation method thereof, in particular to a phase change that can improve the programming speed of the phase change memory, reduce the programming power consumption of the device, and improve the data retention of the device Material, phase change memory device unit containing the material and its preparation method. The invention belongs to the technical field of micro-nano electronics. Background technique

[0002] Phase-change memory technology is based on the idea that phase-change thin films can be applied to phase-change storage media proposed by Ovshinsky in the late 1960s and early 1970s. It is a storage device with low price and stable performance. Phase-change memory can be made on a silicon wafer substrate, and its key materials are recordable phase-change films, heating electrode materials, heat insulating materials, and lea...

Claims

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