Method for manufacturing capacitor of semiconductor device

Abstract

A method for manufacturing a capacitor of a semiconductor device includes forming a lower metal layer over a substrate, forming a dielectric layer over the lower metal layer, forming an upper metal layer over the dielectric layer, forming an upper electrode and a dielectric layer pattern by performing a reactive ion etching process with respect to the upper metal layer using the dielectric layer as an etch stop layer, and exposing a top surface of the lower metal layer, and performing a chemical down-stream etch (CDE) process to remove a by-product of a sidewall of the upper electrode.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device capacitor. Background technique [0002] Capacitors may be used to store predetermined data in memory devices such as dynamic random access memory (DRAM). The capacitor includes capacitor electrodes called storage nodes and plate nodes and a dielectric layer interposed between the capacitor electrodes. [0003] Recently, due to the increasing integration of semiconductor storage devices, the chip area of ​​the storage battery in the semiconductor storage device is reduced, and the operating voltage of the semiconductor storage device is reduced. Based on this, even in the case where the design area of ​​the capacitor is reduced, it is necessary for the capacitor, which is one of the components of the semiconductor memory device, to have a charge amount necessary for the operation of the semiconductor memory device. If the charge amount is insufficient, problems such as soft er...

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Problems solved by technology

However, since the operating voltage (V) decreases with the increasing integration of memory devices, the capacitance (C) must be increased to obtain a sufficient amount of charge

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