Semiconductor electrode, preparation method thereof and solar cell comprising semiconductor electrode
A solar cell and semiconductor technology, applied in the field of dye-sensitized solar cells, can solve the problems of low photoelectric conversion rate of dye-sensitized solar cells, and achieve the effects of improving photoelectric conversion rate, increasing photoelectric current, and prolonging lifespan
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0021] The preparation method of the semiconductor electrode provided by the invention comprises forming a semiconductor layer containing semiconductor particles and metal oxide particles on the conductive bottom layer, and then forming a dye layer on the semiconductor layer, wherein the metal oxide particles are Zr, Nb, Ta, Oxide particles of one or more of Mo, W, Ni, Cu, Zn, Cd, Sn, Bi, Fe, Sb.
[0022] The preparation method of the semiconductor nanocrystal film comprises mixing metal oxide particles and semiconductor particles in the presence of a dispersant. The contact method can use various existing methods to mix metal oxide particles and semiconductor particles, for example, mechanical stirring and high-energy ball milling can be used. The preparation process of the semiconductor nanocrystalline film will be described in detail below by taking the ball milling method as an example.
[0023] The ball milling method includes mixing metal oxide particles and semiconduct...
Embodiment 1
[0034] This example is used to prepare the semiconductor electrode for a dye-sensitized solar cell provided by the present invention and the dye-sensitized solar cell containing the semiconductor electrode.
[0035] (1) Preparation of semiconductor crystal film precursor solution
[0036] 25 g TiO 2 particles (particle diameter 30 nm), 2.4 g of SnO 2 (TiO 2 with SnO 2 The substance mass ratio is 100:5), join in 100 milliliters of polyethylene glycols, be configured into slurry, slurry puts into ball mill (Nanjing University Instrument Factory, model QM-3SP2), is ball milling time 0.5 hour in technological condition, ball milling The temperature is 25° C., and the precursor solution P1 is obtained.
[0037] (2) Preparation of semiconductor electrodes
[0038] The precursor solution P1 with a weight of , with a thickness of 4 mm), on which a semiconductor nanocrystal film with a thickness of 10 microns is formed.
[0039] The semiconductor nanocrystalline film and fluorin...
Embodiment 2
[0050] This example is used to prepare the semiconductor electrode for a dye-sensitized solar cell provided by the present invention and the dye-sensitized solar cell containing the semiconductor electrode.
[0051] Dye-sensitized solar cell R2 was prepared in the same manner as in Example 1, except that the precursor solution P1 was replaced by the precursor solution P2 prepared as follows, and the mass ratio of metal oxide particles to semiconductor particles in P2 was 100:10.
[0052] 25 g TiO 2 Particles (particle diameter 30 nm), 4.7 g of SnO 2 , added to 100 milliliters of polyvinyl alcohol, configured into a slurry, and the slurry was put into a ball mill (Nanjing University Instrument Factory, model QM-3SP2), and the process conditions were that the ball milling time was 0.5 hours, and the ball milling temperature was 25°C to obtain the precursor solution P2 .
PUM
| Property | Measurement | Unit |
|---|---|---|
| Diameter | aaaaa | aaaaa |
| Particle diameter | aaaaa | aaaaa |
| Diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More - R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com
