Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Etching bath composition for transparent conductive film

A technology of transparent conductive film and corrosive solution, which is applied in the direction of surface etching composition, chemical instrument and method, etc., and can solve problems such as inconvenience

Active Publication Date: 2010-02-17
KANTO CHEM CO INC
View PDF11 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0022] This shows that above-mentioned existing corrosive liquid composition obviously still has inconvenience and defect in use, and urgently needs to be further improved
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general corrosion solution composition can not solve the above-mentioned problems. Urgent problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching bath composition for transparent conductive film
  • Etching bath composition for transparent conductive film
  • Etching bath composition for transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0064] (Composition of corrosion solution)

[0065] Table 1 shows the compositions of the etching solutions of Examples and Comparative Examples of the present invention.

[0066] Table 1

[0067] Example No.

Oxalic acid

basic compound

polysulfonic acid compound

water

Example 1

3.4% by weight

TMAH

1.5% by weight

-

Residual amount

Example 2

3.4% by weight

TMAH

2.0% by weight

-

Residual amount

Example 3

3.4% by weight

TMAH

2.7% by weight

-

Residual amount

Example 4

3.4% by weight

TMAH

3.8% by weight

-

Residual amount

Example 5

0.5% by weight

TMAH

0.4% by weight

-

Residual amount

Example 6

1.0% by weight

TMAH

0.7% by weight

-

Residual amount

Example 7

5.0% by weight

TMAH

3.2%...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an etching bath composition for transparent conductive film, which has few indium oxalate precipitation in the corrosion processing for transparent conductive film of ITO film used in liquid crystal display device and the like. The indium oxalate precipitation can be effectively prevented even if the concentration of indium is high in the etching bath in the transparent conductive film corrosion process, through the etching bath composition for transparent conductive film containing oxalic acid and alkaline compounds (except triethanolamine).

Description

technical field [0001] The invention relates to an etchant composition used for transparent conductive films of liquid crystal display (LCD) and electroluminescent display (ELD) display elements. Background technique [0002] As transparent conductive films used in liquid crystal display (LCD) and electroluminescent display (ELD) display elements, etc., there are indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide, tin oxide, zinc oxide, etc., among which ITO Membranes and IZO membranes are widely used. As a patterning method of a transparent conductive film, a transparent conductive film is generally formed on a substrate such as glass by sputtering, etc., a resist pattern is formed by photolithography, and the transparent conductive film is etched to form an electrode pattern. [0003] Etching solutions for transparent conductive films have conventionally used solutions containing (1) ferric chloride aqueous solution, (2) iodic acid aqueous solution, (3) phospho...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/00C09K13/02
CPCC09K13/02C23F1/32
Inventor 村上豊石川典夫
Owner KANTO CHEM CO INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products