Technique for processing silicon chip

Abstract

The invention discloses a technique for processing a silicon chip, which comprises the following steps: (1) performing double-sided grinding on the chamfered silicon chip by a double-sided grinding machine; (2) removing micro-convex parts on the silicon surface with mixed solution combined by HF solution and either H2O2 or O3; (3) performing conventional acid corrosion on the silicon chip; and (4)performing conventional double-sided polishing on the silicon chip after the acid corrosion, and performing single-sided fine polishing and cleaning on the silicon chip. The technique for processingthe silicon chip has the advantages of capability of obtaining the silicon chip with high flatness and capability of reducing the removal amount in the whole manufacturing process about 20 microns which is equivalent to the removal amount in single-sided polishing.

Description

technical field

[0001] The invention relates to a silicon chip processor for removing mechanical damage and reducing silicon chip processing removal amount. Background technique

[0002] Semiconductor silicon wafer is the main substrate material of modern ultra-large-scale integrated circuits. Generally, it is an integrated circuit-level wafer manufactured through processes such as crystal pulling, slicing, chamfering, grinding (including grinding and grinding), corrosion, polishing, and cleaning. Semiconductor wafers. Among them, the grinding process after chamfering can make the silicon wafer obtain a higher-precision shape, and the machining accuracy directly affects the geometric parameters of the product.

[0003] The ability of the traditional double-sided lapping technology (lapping) of silicon wafers to improve the machining accuracy of the surface of 300mm silicon wafers has been difficult to greatly improve. After grinding, the local flatness of the silicon wafer...

Images