Method for preparing light absorption layer of CuInSe2 (CIS) based thin film solar cell
A technology for solar cells and light-absorbing layers, applied to coatings, circuits, electrical components, etc., can solve problems such as loss, complex equipment structure, and many defects in the absorption layer, and achieve high production efficiency and simple equipment structure
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[0024] Example 1
[0025] The sputtering target used is CuIn with a purity of 99.99% 0.7 Ga 0.3 Se 2.2 Ceramic target, the size is φ70×3mm, (CuIn 0.7 Ga 0.3 Se 2.2 The ceramic target is commercially available and produced by Beijing Changhao Youyan New Material Technology Development Co., Ltd. CuIn is used in the following examples 0.7 Ga 0.3 Se 2.2 The ceramic target is the same) The X-ray diffraction pattern of the ceramic target used is as follows image 3 Shown. The preparation steps of this embodiment are as follows:
[0026] (1) Cut the soda glass into a 10×10mm substrate, first put it in deionized water for ultrasonic cleaning for 5 minutes to remove the debris generated during the cutting process, and then put it in acetone for ultrasonic cleaning for 15 minutes to remove the oil on the surface of the substrate. Then put the substrate in alcohol for ultrasonic cleaning for 2 minutes, and finally dry the substrate for use;
[0027] (2) Put the cleaned soda glass substrate int...
Example Embodiment
[0032] Example 2
[0033] The sputtering target used is CuIn with a purity of 99.99% 0.7 Ga 0.3 Se 2.2 Ceramic target, the size is φ70×3mm, the preparation steps are as follows:
[0034] (1) Cut the soda glass into a 10×10mm substrate, first put it in deionized water for ultrasonic cleaning for 5 minutes to remove the debris generated during the cutting process, and then put it in acetone for ultrasonic cleaning for 15 minutes to remove the oil on the surface of the substrate. Then put the substrate in alcohol for ultrasonic cleaning for 2 minutes, and finally dry the substrate for use;
[0035] (2) Put the cleaned soda glass substrate into the cavity of the magnetron sputtering equipment, install a Mo target in the cavity (the purity of the Mo target is 99.99%), the target base distance is 50mm, and then the cavity The body is evacuated to a vacuum degree of less than 3.0×10 -3 Pa, then argon gas was introduced, the pressure was adjusted to 1 Pa, sputtering started, and the sputter...
Example Embodiment
[0039] Example 3
[0040] The sputtering target used is CuIn with a purity of 99.99% 0.7 Ga 0.3 Se 2.2 Ceramic target, the size is φ70×3mm. The preparation steps are as follows:
[0041] (1) Cut the soda glass into a 10×10mm substrate, first put it in deionized water for ultrasonic cleaning for 5 minutes to remove the debris generated during the cutting process, and then put it in acetone for ultrasonic cleaning for 15 minutes to remove the oil on the surface of the substrate. Then put the substrate in alcohol for ultrasonic cleaning for 2 minutes, and finally dry the substrate for use;
[0042] (2) Put the cleaned soda glass substrate into the cavity of the magnetron sputtering equipment, install Mo target in the cavity (Mo target purity is 99.99%), the target base distance is 60mm, and then vacuum to vacuum Degree less than 3.0×10 -3 Pa, then argon gas was introduced, the pressure was adjusted to 1 Pa, sputtering started, and the sputtering power was slowly increased to 120W. Af...
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