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Method for preparing light absorption layer of CuInSe2 (CIS) based thin film solar cell

A technology for solar cells and light-absorbing layers, applied to coatings, circuits, electrical components, etc., can solve problems such as loss, complex equipment structure, and many defects in the absorption layer, and achieve high production efficiency and simple equipment structure

Inactive Publication Date: 2010-03-03
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The difficulty of preparing a large-size absorbing layer by the post-selenization method of the metal film lies in: (1) Because Ga has a large diffusion coefficient and is easy to react with the Mo electrode, it is difficult for Ga to enter the lattice position to form effective doping; (2) Improper control of the selenium atmosphere may cause the loss of Cu and In during the selenization process; (3) During the selenization process, selenium reacts with the metal preset film, and the large volume expansion of the film makes the stress in the selenization film larger
The co-evaporation method is suitable for the preparation of large-sized light-absorbing layers, but the equipment structure is complex and the control is difficult. At present, this technology is only mastered by developed countries such as Germany and the United States.
It is difficult to control the composition of the light absorbing layer prepared by electrodeposition, and there are many defects in the absorbing layer

Method used

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  • Method for preparing light absorption layer of CuInSe2 (CIS) based thin film solar cell
  • Method for preparing light absorption layer of CuInSe2 (CIS) based thin film solar cell
  • Method for preparing light absorption layer of CuInSe2 (CIS) based thin film solar cell

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Embodiment 1

[0025] The sputtering target used is CuIn with a purity of 99.99%. 0.7 Ga 0.3 Se 2.2 Ceramic target, the size is φ70×3mm, (CuIn 0.7 Ga 0.3 Se 2.2 The ceramic target is commercially available and produced by Beijing Changhao Youyan New Material Technology Development Co., Ltd. CuIn used in the following examples 0.7 Ga 0.3 Se 2.2 The ceramic target is the same as this) The X-ray diffraction pattern of the ceramic target used is as follows image 3 shown. The preparation steps of this embodiment are as follows:

[0026] (1) Cut the soda glass into a substrate of 10×10mm, put it into deionized water and ultrasonically clean it for 5 minutes to remove the debris generated during the cutting process, then put it into acetone and ultrasonically clean it for 15 minutes to remove the oil stain on the surface of the substrate, Put the substrate into alcohol and ultrasonically clean it for 2 minutes, and finally dry the substrate for use;

[0027] (2) Put the cleaned soda glas...

Embodiment 2

[0033] The sputtering target used is CuIn with a purity of 99.99%. 0.7 Ga 0.3 Se 2.2 Ceramic target, the size is φ70×3mm, the preparation steps are as follows:

[0034] (1) Cut the soda glass into a substrate of 10×10mm, put it into deionized water and ultrasonically clean it for 5 minutes to remove the debris generated during the cutting process, then put it into acetone and ultrasonically clean it for 15 minutes to remove the oil stain on the surface of the substrate, Put the substrate into alcohol and ultrasonically clean it for 2 minutes, and finally dry the substrate for use;

[0035] (2) Put the cleaned soda glass substrate into the cavity of the magnetron sputtering equipment, install the Mo target material (the Mo target material purity is 99.99%) in the cavity, the target base distance is 50mm, and then align the cavity The body is evacuated to a vacuum degree of less than 3.0×10 -3 Pa, then argon gas was introduced, the pressure was adjusted to 1Pa, sputtering wa...

Embodiment 3

[0040] The sputtering target used is CuIn with a purity of 99.99%. 0.7 Ga 0.3 Se 2.2 Ceramic target, the size is φ70×3mm. The preparation steps are as follows:

[0041] (1) Cut the soda glass into a substrate of 10×10mm, put it into deionized water and ultrasonically clean it for 5 minutes to remove the debris generated during the cutting process, then put it into acetone and ultrasonically clean it for 15 minutes to remove the oil stain on the surface of the substrate, Put the substrate into alcohol and ultrasonically clean it for 2 minutes, and finally dry the substrate for use;

[0042] (2) Put the cleaned soda glass substrate into the cavity of the magnetron sputtering equipment, install the Mo target material (the purity of the Mo target material is 99.99%) in the cavity, the target base distance is 60mm, and then evacuate to a vacuum degree less than 3.0×10 -3 Pa, then argon gas was introduced, the pressure was adjusted to 1Pa, sputtering was started, and the sputte...

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Abstract

The invention relates to a method for preparing a light absorption layer of CuInSe2(CIS) based thin film solar cell. The method includes the following steps: firstly, sputtering Mo electrodes requiredfor preparing the CIS radical thin film solar cell on a soda glass substrate; then sputtering on the Mo electrodes by taking CuIn0.7Ga0.3Se2.2 as target to obtain a CuIn0.7Ga0.3Se2.0 (CIGS) thin filmin deposited status; subsequently conducting heat treatment on the CIGS thin film in deposited status: filling argon in a vacuum cavity to 100Pa, heating up the CIGS thin film in deposited status atthe heating rate of 20-40 DEG C / min to 450-550 DEG C, preserving the heat for 15min, then reducing the temperature to 350 DEG C at the temperature reduction rate of 20-40 DEG C / min, cooling to the room temperature with a furnace and obtaining the light absorption layer of CuInSe2 radical thin film solar cell CIGS.

Description

technical field [0001] The invention relates to a method for preparing thin film solar cells, in particular to the preparation of CuInSe 2 A method for light-absorbing layer-based thin-film solar cells. Background technique [0002] copper indium selenide (CuInSe 2 , referred to as CIS)-based thin-film solar cells are the most representative photovoltaic devices in compound semiconductors. Because of its high conversion efficiency, low manufacturing cost and stable performance, it has become one of the research hotspots in the international photovoltaic industry, and it is likely to become the next generation of commercial thin-film solar cells. [0003] The light-absorbing layer is the core functional layer of CIS-based thin-film solar cells, and the quality of this layer directly affects the photoelectric conversion efficiency of the cell. The light absorption layer of CIS-based thin film solar cells mainly includes CuIn x (Ga, Al) 1-x Se y (S, Te) 2-y (x=0~1, y=0~2...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0224H01L31/0216C23C14/34C23C14/18C23C14/35C23C14/06
CPCY02P70/50
Inventor 古宏伟丁发柱
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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