Film forming method and film forming apparatus

Abstract

The invention provides a film forming method and a film forming apparatus. The film forming apparatus not only can suppress generation of particle during the film forming processing, but also can perform cleaning processing under the temperature higher than cleaning processing in prior art, so that the processing capability is enhanced. The film forming apparatus (12) for forming film on the surface of the object to be processed (W) comprises: a processing container (14); a placement table (62) made from aluminum nitride for placing objects to be processed thereon; a heating unit (66) for heating objects to be processed; a spraying head portion (18) disposed opposite to the placement table and used for introducing necessary gas into the processing container; and a spraying head peripheralgas supplement unit (22) for supplying inactive gas to the peripheral of the spraying head portion during temperature rising after cleaning processing inside the processing container. Thereby, even AIF class substance generated in the cleaning processing is formed into particle and disperse during temperature rising of the placement table, the substance will not adhere to the spraying head portionon the opposite side.

Description

technical field [0001] The present invention relates to a film-forming method and a film-forming apparatus for forming a titanium film or a titanium nitride film on an object to be processed such as a semiconductor wafer, and more particularly to a film-forming method and a film-forming apparatus for suppressing generation of particles. Background technique [0002] Generally, in order to manufacture a semiconductor integrated circuit, film formation, pattern etching, etc. are repeated on a substrate such as a semiconductor wafer to form a plurality of desired elements. In addition, in a semiconductor integrated circuit, it is of course necessary to use a low-resistance metal as a wiring for connecting each element therein, as a contact metal for realizing electrical contact with each element, or as a barrier metal used as a countermeasure against Si sucking out of the substrate. For the material, it is also necessary to use a material with excellent corrosion resistance. ...

AI Technical Summary

Problems solved by technology

[0014] However, in this case, the temperature of the mounting table with a relatively large heat capacity is lowered from, for example, 650° C. as the film forming temperature to 200° C. as the cleaning temperature, and the temperature must be raised to 650° C. after the cleaning process. It takes a very long time to reheat, for example, about 3 hours, so there is a problem that the production capacity is greatly reduced

Images