Chemical mechanical polishing solution

Abstract

The invention discloses chemical mechanical polishing solution containing abrasive grains and one or more of the following organic salts: hydrochlorides of aliphatic amines, sulfates of aliphatic amines, hydrochlorides of amides, sulfates of amides, hydrochlorides of amino acids and sulfates of amino acids. The chemical mechanical polishing solution of the invention can increase the removal rate of silica dielectric materials (PETTEOS) by the chemical method under the acidic or alkaline condition and has higher removal rate of silicon oxide and higher planarization efficiency when the contentof the abrasive grains is relatively low. The surfaces of the materials are free of scratch and corrosion.

Description

technical field [0001] The invention relates to a polishing liquid, in particular to a chemical mechanical polishing liquid. Background technique [0002] With the rapid development of the integrated circuit (IC) industry, the size of IC features continues to shrink, the size of silicon wafers continues to increase, and the IC process becomes more and more complex and refined, which puts higher demands on the surface quality of the interlayer dielectric inside the chip. requirements. Especially when entering the sub-90nm process node, small differences in surface morphology may cause large changes in device performance, which poses higher challenges to the global planarization of dielectric films, such as surface depth, micro scratches, material Defects and erosion, particulate contamination, etc. are strictly limited. However, the traditional dielectric material polishing fluid has a high concentration of abrasive particles, which increases the potential for the above-men...

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a chemical mechanical polishing solution for overcoming defects such as deep surface steps, fine scratches, material defects and erosion, and more particle pollutants that are easily caused by the high concentration of abrasive particles in traditional chemical mechanical polishing fluids. Polishing fluid, which can increase the removal rate of silicon dioxide dielectric material (PETEOS) under acidic or alkaline conditions by chemical methods, and can also have a relatively low content of abrasive particles (mass percentage 10-20%) High silicon oxide removal rate and high planarization efficiency, no scratches and no corrosion on the material surface

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