Bend waveguide dual-wavelength laser device used for all-optical clock recovery
A dual-wavelength laser and curved waveguide technology, which is applied in the direction of optical waveguide light guides, semiconductor lasers, semiconductor laser devices, etc., can solve the problems of waveguide effective refractive index difference, cost or difficulty, and affect effective refractive index, etc., to achieve simple manufacturing process , good application prospects, low cost effect
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Embodiment 1
[0038] figure 2 It is a curved waveguide dual-wavelength laser integrated with two DFB lasers for all-optical clock recovery. InGaAsP / InP-based integrated optoelectronic devices with working wavelength in the 1550nm band, through non-coherent mode or coherent mode to achieve all-optical clock recovery.
[0039] The device integrates two distributed feedback lasers on one chip, which are the first DFB laser segment 17 and the second DFB laser segment 18 respectively.
[0040] First, the epitaxial materials of the device are as follows. Through the metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) method, first do the first epitaxy on the n-type substrate material, grow the n-type InP lower cladding layer, and form the substrate 6 (thickness 200nm) containing the lower cladding layer , the doping concentration is about 1×10 18 cm -2 ), and then epitaxially grow a 100nm-thick non-doped lattice matching InGaAsP waveguide layer 7 (photolu...
Embodiment 2
[0044] image 3 It is a curved waveguide dual-wavelength laser for all-optical clock recovery that integrates two DFB lasers and a phase modulation section. InGaAsP / InP-based integrated optoelectronic devices with working wavelength in the 1550nm band, through non-coherent mode or coherent mode to achieve all-optical clock recovery.
[0045] The device integrates two distributed feedback lasers on one chip, namely the first DFB laser segment 17 and the second DFB laser segment 18 , and also integrates a phase modulation segment 20 .
[0046] First, the epitaxial materials of the device are as follows. Through the metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) method, first do the first epitaxy on the n-type substrate material, grow the n-type InP lower cladding layer, and form the substrate 6 (thickness 200nm) containing the lower cladding layer , the doping concentration is about 1×10 18 cm -2 ), and then sequentially grow 100nm t...
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