Signal read-out amplifying method of photosensitive compound medium grid MOSFET detector

Abstract

The invention relates to a signal read-out amplifying method of a photosensitive compound medium grid MOSFET detector, comprising the following steps of: setting N-type semiconductor regions at both sides above a P-type semiconductor material of a substrate to form a source electrode and a drain electrode, setting a bottom-layer and top-layer insulting medium material and grid above the substrate as well as a photosensitive compound medium grid MOSFET detector of a photoelectron storage layer; reading out and amplifying the photoelectron, i.e., grounding the source electrode of the detector and the substrate, connecting the drain electrode at a positive voltage of about 0.1V, and enabling the MOSFET detector to operate in a linear region by adjusting the grid voltage of about 1-3V; directly measuring the output drain current to obtain the relation of the current variation of the drain electrode and the number of the searched photoelectron i.e., biasing VG on the grid of the detector and grounding the substrate, wherein the photoelectron in the photoelectron storage layer is formed in the P-type semiconductor substrate by tunneling when the negative bias is high enough. The invention overcomes error caused by excursion of the electron mobility.

Description

1. Technical field [0001] The invention relates to an imaging detection device, especially the structure and signal readout amplification method of the imaging detection device in the infrared, visible light band to ultraviolet band. 2. Background technology [0002] The current imaging detection devices are mainly CCD and CMOS-APS. The basic working principle of CCD devices is related to the physical mechanism of metal-oxide-silicon (MOS) capacitors. The basic unit of CCD is MOS capacitors, and its working process is mainly signal charges. production, storage, transfer and detection. CCD is a device that stores and transfers signals in the form of charge packets. Its outstanding feature is that it uses charges as signals, which is different from other devices that use current or voltage as signals. When the CCD is working, the clock pulse voltage is used to generate and control the change of the semiconductor potential well, thereby realizing the storage and transfer of ch...

AI Technical Summary

Problems solved by technology

[0014] 1) Imaging speed is difficult to increase: CCD imaging process needs to physically move charges, therefore, imaging speed is difficult to increase

[0015] 2) Low yield: due to its interconnected MOS capacitor architecture and the need to transfer charges, in the same row of CCD pixels connected in series, any MOS capacitor failure or malfunction will affect the normal transfer of charges in the capacitor, resulting in The pixels after the capacitor in the row of CCD pixels cannot work normally

Therefore, it requires extremely high process control, so the yield is usually low and the production cost is high

[0016] 3) It is difficult to further shrink the pixel: in order to maintain the same signal-to-noise ratio in the charge transmission, the reduction of the CCD unit pixel requires thinning the thickness of Oxide-Nitride (ON), while the reliability requirement of ON is unchanged, so the CCD pixel It is quite difficult to further reduce the

[0019] 1) High dark current noise: Since CMOS-APS uses diodes as photosensitive devices, its dark current is almost two orders of magnitude higher than that of CCD

[0020] 2) It is difficult to improve the effective quantum efficiency: Unlike CCD, CMOS-APS contains at least three transistors in addition to photodiodes, and the duty cycle is less than 60%.

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