Method for removing photoresist and plasma processing equipment applying same

Abstract

The invention provides a method for removing a photoresist, comprising the following steps of: (100) etching the photoresist positioned on the surface of a silicon wafer by means of a first process gas so as to at least remove a hardened layer of the photoresist; and (200) continuously etching the photoresist by means of a second process gas so as to remove the rest photoresist. Besides, the invention also provides plasma processing equipment applying the method for removing the photoresist. The method for removing the photoresist and the plasma processing equipment can fast and uniformly remove the photoresist positioned on the surface of the silicon wafer, effectively reduce and even prevent the damage to the surface of the silicon wafer and also enhances the production efficiency, the processing quality, and the like.

Description

Technical field [0001] The present invention relates to the field of microelectronics technology, and in particular, to a method for removing photoresist and a plasma processing device applying the method. Background technique [0002] With the advancement of science and technology, large-scale integrated circuits have been applied to various fields of social production, and their requirements for integration and processing accuracy are getting higher and higher. Semiconductor processing companies must continuously improve their own production capacity and processing quality to meet new market demands. [0003] The processing of semiconductor devices is a process in which photoresist is used as an intermediate medium and its anti-corrosion performance is used to achieve pattern transformation, transfer and processing, and finally to transfer the pattern information to the silicon wafer. The processing process includes: ①Pattern transfer process, uniformly coating photoresist on th...

AI Technical Summary

Problems solved by technology

[0005] In practical applications, the photoresist on the surface needs to be removed to obtain the finished silicon wafer. However, after plasma etching or ion implantation, a carbon-rich structure with a certain thickness will be formed on the surface of the photoresist. Or a hardened layer similar to a carbon-rich structure, which makes it difficult to remove the photoresist effectively and uniformly, and also damages the silicon wafer (the silicon wafer mentioned herein includes the dielectric) during the removal of the photoresist layer and polysilicon / monocrystalline silicon layer) surface damage

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