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Method for synthesizing silicon carbide nano wire by utilizing plant fiber

A technology of silicon carbide nanowires and a synthesis method, which is applied in the field of synthesizing silicon carbide nanowires, can solve the problems of complex production process, high production cost, unfriendly environment and the like, and achieves the effects of low cost, simple method and environmental friendliness.

Active Publication Date: 2010-06-23
ZHEJIANG UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The raw materials of this preparation method are not friendly to the environment, the production cost is high, the production process is complicated, and it is not suitable for industrialized production

Method used

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  • Method for synthesizing silicon carbide nano wire by utilizing plant fiber

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] First, 0.7522g of iron nitrate nonahydrate, 0.1810g of silicon powder and 0.3878g of silicon dioxide powder were uniformly dispersed in 20ml of deionized water, stirred for 30 minutes, ultrasonically oscillated for 30 minutes, and then 0.1551g of purified hemp fiber was added. After soaking for 1 hour, the bamboo fiber is separated from the solution, and placed in an oven at 90° C. to dry it. The bamboo fiber after drying is placed in the high-temperature fixed-bed reaction furnace that temperature is 1200 ℃, feeds the argon gas that flow rate is 500sccm as shielding gas, obtains final product after reacting for 2 hours, is a large amount of silicon carbide nanowires (see figure 1 ).

Embodiment 2

[0018] First, 0.7144g of nickel nitrate hexahydrate and 0.3437g of silicon powder were uniformly dispersed in 20ml of deionized water, stirred for 30 minutes, ultrasonically oscillated for 30 minutes, and then 0.1473g of purified cotton fiber was added. After soaking for 2 hours, the cotton fibers were separated from the solution and dried in an oven at 90°C. Put the dried cotton fiber in a high-temperature fixed-bed reaction furnace with a temperature of 1200°C, and feed argon gas with a flow rate of 300 sccm as a protective gas. After reacting for 2 hours, the final product is obtained, and the appearance of the product is similar to figure 1 .

Embodiment 3

[0020] First, 0.403g of cobalt nitrate hexahydrate and 0.273g of silicon powder were uniformly dispersed in 20ml of deionized water, stirred for 45 minutes, ultrasonically oscillated for 45 minutes, and then 0.117g of purified poplar fiber was added. After soaking for 1.5 hours, the hardwood wood fiber is separated from the solution, and placed in an oven with a temperature of 90° C. to dry it. Place the dried hemp fiber in a high-temperature fixed-bed reaction furnace with a temperature of 1400 ° C, and feed in argon gas with a flow rate of 300 sccm as a protective gas. After reacting for 3 hours, the final product is obtained, and the appearance of the product is similar to figure 1 .

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Abstract

The invention discloses a method for synthesizing silicon carbide nano wire by utilizing natural plant fiber. The method includes that natural plant fiber after purification treatment is taken as carbon source and template, one or more than one of silica powder, silicon dioxide and silicon dioxide slice is taken as silicon source, metal Fe, Co, Ni or Ag is taken as catalyst, the charging weight ratio of plant fiber after purification treatment, silicon source and metal is controlled to be 1:0.67-7:0.5-3, firstly immersion method is adopted to cause the silicon source and metal ion to be absorbed on the surface of the natural plant fiber, separation and drying are carried out, thus obtaining the natural plant fiber absorbed with silicon source and metal ion, and the natural plant fiber absorbed with silicon source and metal ion is subject to reaction at 900-1500 DEG C for 1-5 hours under the protection of chemical inert gas, thus obtaining the silicon carbide nano wire. The invention makes the best of low-cost natural plant fiber, the natural plant fiber is taken as template and carbon source, the method is simple, cost is low, and industrialization is easy to realize.

Description

(1) Technical field [0001] The invention relates to a method for synthesizing silicon carbide nanowires. (2) Background technology [0002] Silicon carbide material is a wide bandgap (2.3ev) semiconductor material, which has the advantages of anti-oxidation, chemical corrosion resistance, high thermal conductivity, and strong thermal stability. The unique optical, electrical, and mechanical properties of one-dimensional silicon carbide nanomaterials due to the nanostructure have aroused widespread interest. As an important functional material, one-dimensional silicon carbide nanomaterials have great application prospects in high-temperature, high-frequency, and high-power semiconductor devices, and are called "extreme electronic materials with great application potential". SiC nanowire array has low turn-on voltage and threshold voltage, high current density, and stable field emission performance. It is an ideal field emission cathode material and has broad application pros...

Claims

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Application Information

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IPC IPC(8): C01B31/36
Inventor 陶新永李奕坪张文魁黄辉甘永平
Owner ZHEJIANG UNIV OF TECH
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