Unlock instant, AI-driven research and patent intelligence for your innovation.

Intelligent PID control method for controlling growth process of monocrystalline silicon and system thereof

A control method and growth process technology, applied in the field of intelligent PID control, can solve problems such as large empirical errors and difficulty in further improving the quality of monocrystalline silicon growth, and achieve reliable operation and advanced performance

Active Publication Date: 2013-10-23
BEIJING TAIKE YIHANG SCI & TRADING
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the above Fuzzy-PID composite control method, the predictive Fuzzy self-tuning PID parameter controller is used
The fuzzy rules here are determined based on empirical rules, which will obviously bring large empirical errors, and it is difficult to further improve the quality of single crystal silicon growth

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Intelligent PID control method for controlling growth process of monocrystalline silicon and system thereof
  • Intelligent PID control method for controlling growth process of monocrystalline silicon and system thereof
  • Intelligent PID control method for controlling growth process of monocrystalline silicon and system thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0069] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. For convenience, the control system for implementing the intelligent PID control method of the present invention will be described first.

[0070] figure 1 It is an outline diagram of the internal composition of the intelligent PID control system provided by the present invention. see figure 1 As shown, the intelligent PID control system is centered on an industrial control computer with a touch screen, memory and central processing unit, and also includes at least two servo controllers, Jingsheng motor / Cucuisheng motor, Jingzhuan motor / Cucuizhu motor , diameter sensor, temperature alarm switch, temperature controller, length encoder, crucible bit encoder and other components. Wherein, the industrial control computer is respectively connected to the first servo controller and the second servo controller through two PCI2306 digital-analog ports. The first servo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention aims at the problem that the general PID controller is difficult to effectively control the growth process of monocrystalline silicon, and provides an intelligent PID control method for controlling growth process of monocrystalline silicon and a system thereof. The method comprises: firstly monitoring the growth process of the monocrystalline silicon crystalline, and acquiring the deviation of the diameter of the monocrystalline silicon and the preset diameter; classifying according to the deviation of the diameter of the monocrystalline silicon and the preset diameter on the base of the fuzzy control theory, calculating the required integral component and derivative control component for controlling pulling rate according to the classified diameter deviation, and controlling the pulling rate; classifying the deviation of the pulling rate and the preset pulling rate on the base of the fuzzy control theory, calculating the required integral component and derivative control component for controlling temperature according to the classified pulling rate, and controlling the temperature.

Description

technical field [0001] The present invention relates to an intelligent PID (Proportional Integral Derivative) control method for controlling the growth process of monocrystalline silicon, and also relates to an intelligent control method for implementing the method and intelligently controlling the growth process of monocrystalline silicon The control system belongs to the technical field of industrial automatic control. Background technique [0002] Monocrystalline silicon is one of the most basic materials in the electronic information industry. According to different crystal growth methods, it can be divided into Czochralski method (CZ), zone melting method (FZ) and epitaxy method. Single crystal silicon rods are grown by Czochralski method and zone melting method, and single crystal silicon thin films are grown by epitaxial method. The method of making single crystal silicon is usually to make polycrystalline silicon or amorphous silicon first, and then use Czochralski...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/20C30B29/06
Inventor 焦建耀
Owner BEIJING TAIKE YIHANG SCI & TRADING