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A kind of igbt drive and protection circuit

A technology for protecting circuits and circuits, applied in the field of power electronics, can solve the problems of lack of gate protection, collector overvoltage protection, insufficient power-down protection, and IGBT false turn-on.

Active Publication Date: 2015-09-02
宁波德业变频技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The general IGBT driving circuit in the prior art is as figure 1 , not perfect in terms of power-down protection; when the PWM signal terminal loses power, the IGBT will be turned on by mistake; and it lacks gate protection and collector overvoltage protection

Method used

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  • A kind of igbt drive and protection circuit
  • A kind of igbt drive and protection circuit
  • A kind of igbt drive and protection circuit

Examples

Experimental program
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Effect test

Embodiment 1

[0018] Embodiment one: if figure 2 As shown, the IGBT drive circuit includes three parts: drive signal amplification, push-pull drive and protection. In the figure, Q0 is an IGBT, which is the target to be driven. Q1, Q2, and Q3 are NPN transistors, and Q4 is a PNP transistor. The PWM signal is connected to the emitter of the transistor Q1, and the base of the transistor Q1 is pulled up to the power supply VCC through the resistor R1; the collector of the transistor Q1 is pulled up to the power supply VDD through the resistor R2, and connected to the base of the transistor Q2; the transistor Q2 is connected to the base of the transistor Q2. Resistor R3 constitutes a typical common-emitter amplifier circuit, which is a preamplifier circuit for PWM signals and has the function of level shifting; transistor Q3 and transistor Q4 are push-pull driven, powered by VDD, resistor R4 and resistor R5 are respectively connected to The transistor Q3 and the base of the transistor Q4 lim...

Embodiment 2

[0022] Embodiment 2: Aiming at the above shortcomings of Embodiment 1, it is improved to Embodiment 2 on the basis of Embodiment 1. Such as image 3 :exist figure 2 On the basis of the first embodiment shown. Increase the voltage regulator tube D1 in parallel between the gate and the emitter, and increase the capacitor C1 in parallel between the collector and the emitter of the IGBT. It is also possible to use a scheme in which the diode D1 is connected in parallel between the collector and the emitter of the IGBT alone, or a scheme in which the capacitor C1 is connected in parallel between the collector and the emitter of the IGBT; only the corresponding functions are lacking.

[0023] Such as image 3 : Diode Dl is a voltage regulator tube, its voltage regulator value H is higher than VDD, lower than the allowable maximum value of VG. If VG has a peak value exceeding the withstand voltage of the gate, the diode D1 will clamp VG at the regulated value VZ to protect the g...

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Abstract

The present invention belongs to the technical field of power electronics, in particular to an IGBT drive and protection circuit which can effectively realize power-down protection and can not be switched on by mistake. The IGBT drive and protection circuit comprises a common-emitter amplifying circuit, and a push-pull drive circuit and IGBT, wherein the common-emitter amplifying circuit is provided with a PWM signal input terminal for amplifying PWM signals, and the push-pull drive circuit is provided with a VDD power supply input terminal for receiving power from a VDD power supply. An NPN triode is connected between the common-emitter amplifying circuit and the PWM signal input terminal. The PWM signal input terminal is led out from the emitter; a base electrode of the terminal is provided with a VCC power supply input terminal through a resistor for receiving power from a VCC power supply; and a collecting electrode of the terminal is connected with the VDD power supply input terminal through a resistor. The IGBT drive and protection circuit has functions of power-down protection, gate protection and overvoltage protection for collecting electrodes, and is stable and reliable.

Description

technical field [0001] The invention belongs to the technical field of power electronics and relates to a drive and protection circuit of an insulated gate bipolar transistor (IGBT). Background technique [0002] Insulated gate bipolar transistor IGBT combines the advantages of power transistor and power field effect transistor MOSFET. It has the characteristics of easy driving, large peak current capacity, self-shutoff, and high switching frequency (10-50kHz). It is widely used in small volume, Among high-efficiency variable frequency power supplies, motor speed control, UPS and inverter welding machines, the driving and protection of IGBTs are the key technologies in their applications. [0003] The general IGBT driving circuit in the prior art is as figure 1 , It is not perfect in power-down protection; when the PWM signal terminal loses power, the IGBT will be turned on by mistake; and it lacks gate protection and collector overvoltage protection. Contents of the inve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/08H03K17/567
Inventor 张和君刘远进牛涛
Owner 宁波德业变频技术有限公司
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