Complex vacuum deposition device

Abstract

The invention relates to a complex vacuum deposition device which consists of a vacuum chamber 4, a cathodic arc evaporation source 2, a middle frequency magnetron sputtering source 7, a direct current magnetron sputtering source 8, a gas ion source 10, a workpiece rest 3 and the like; a gas extraction port 1 is formed at the back of the vacuum chamber 4, the cathodic arc evaporation source 2 is mounted on the vacuum chamber wall which is near to the gas extraction port 1, the middle frequency magnetron sputtering source 7 is mounted on the vacuum chamber wall in the middle position of the two sides of the vacuum chamber 4, and the direct current magnetron sputtering source 8 is mounted on a front door 9 of the vacuum chamber; the gas ion source 10 is mounted in the central position of the vacuum chamber 4, reaction gas is introduced into the gas ion source 10, an ion beam is sprayed to the direction of the gas extraction port 1, and baffle plates 5 of the gas ion source are arranged at the back part and on the side surface of the ion source 10; and working gas is introduced into the vacuum chamber 4 through a working gas inlet pipeline 6 which is in the vicinity of the middle frequency magnetron sputtering source 7 and the direct current magnetron sputtering source 8. The arrangement can form the ideal reaction gas concentration distribution in the vacuum chamber, thereby fully playing the advantages of various film-forming sources and significantly inhibiting the defects of thin films.

Description

Technical field: [0001] The patent of this invention relates to a new type of composite vacuum deposition equipment, which is used for surface modification of materials and deposition of functional thin films. Background technique: [0002] Magnetron sputtering and cathodic arc ion plating have been widely used in wear-resistant parts, optical films, molds, decoration, microelectronics and other fields. Compound materials play an important role in coating materials prepared by magnetron sputtering and vacuum cathodic arc ion plating. [0003] Magnetron sputtering can prepare compound coatings by sputtering compound targets, and can also prepare compound coatings by reactive magnetron sputtering of metal or alloy targets. The former generally requires the use of radio frequency sputtering power supply and high-cost compound targets, and the deposition rate is low; the targets of reactive sputtering are easy to obtain and suitable for large-area uniform deposition, and have b...

AI Technical Summary

Problems solved by technology

[0005] At present, the composite coating equipment that has been developed to integrate magnetron sputtering source, cathodic arc evaporation source and auxiliary ion source has not achieved the optimal distribution of reaction gas. The

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