Method for carrying out Fermi energy level modification on top electrode

Abstract

The invention discloses a method for carrying out Fermi energy level modification on a top electrode, which comprises the following steps: step 1) carrying out thermal oxidation growth of an insulation dielectric thin film on a conductive silicon substrate; step 2) carrying out vacuum evaporation of a layer of organic semiconductor material on the surface of the insulation dielectric thin film; step 3) using electron beam evaporation for evaporating a layer of metal nickel on the organic semiconductor material through a stencil, and naturally oxidizing the metal nickel to nickel oxide in the air; and step 4) continuously using the electron beam evaporation for evaporating a metal electrode through the stencil and completing the production of a device. The utilization of the method can effectively reduce the infiltration and the reaction of a gold electrode to the organic semiconductor layer; simultaneously, the naturally oxidized nickel oxide layer can be taken as a high-work-functiontransition layer, thereby reducing the Schottky barrier between the gold electrode and the organic semiconductor layer and further improving the contact between the electrode and an active layer.

Description

technical field [0001] The invention relates to the technical field of microfabrication in organic semiconductors, in particular to a method for modifying the upper electrode at the Fermi level in the process of manufacturing an organic field effect transistor with an upper electrode structure. Background technique [0002] With the continuous deepening of information technology, electronic products have entered every aspect of people's life and work; in daily life, people's demand for low-cost, flexible, low-weight, and portable electronic products is increasing; traditional inorganic semiconductor-based It is difficult for devices and circuits of materials to meet these requirements, so organic microelectronics technology based on organic polymer semiconductor materials that can realize these characteristics has received more and more attention under this trend. [0003] Improving the performance of organic field effect transistors has always been a goal pursued by this fi...

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Problems solved by technology

However, there are also some problems in the device with the upper electrode structure. For example, when the electrode is evaporated, the metal particles will penetrate into the organic semiconductor material, and even the organic semiconductor material will undergo a chemical reaction to change the performance of the material; another example is the difference between the work function of the electrode material and the organic semiconductor material. Schottky barrier caused by mismatch, etc.

[0004] At present, in order to overcome the problem of metal penetration into the semiconductor, the general solution is to add an organic barrier layer under the electrode, but there has been no good solution to the problem of the work function difference between the electrode and the semiconductor.

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