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Low-power consumption micro-heater with mesh-structured heating film and fabrication method thereof

A heating film and heater technology, applied in the direction of microstructure technology, microstructure devices, ohmic resistance heating, etc., can solve the problems of affecting sensor sensitivity and low catalyst coverage, increase the corrosion window area, facilitate arraying and batch production Production, the effect of reducing the release time

Active Publication Date: 2010-08-04
HEFEI MICRO NANO SENSING TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the suspended film micro film heater is used in gas detection, due to structural limitations, the catalyst can only be coated on one side of the central heating film area, and the catalyst coverage is not high, which directly affects the sensitivity of the sensor.

Method used

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  • Low-power consumption micro-heater with mesh-structured heating film and fabrication method thereof
  • Low-power consumption micro-heater with mesh-structured heating film and fabrication method thereof
  • Low-power consumption micro-heater with mesh-structured heating film and fabrication method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The micro-heater structure described in this embodiment can be found in figure 1 . Its production process is as follows:

[0034]1. Fabricate a dielectric film on a silicon wafer. Select an N-type (100) silicon wafer, first thermally oxidize and grow silicon oxide with a thickness of 0-3 microns, then use LPCVD to deposit silicon nitride with a thickness of 0.5 microns on the silicon wafer, and then use PECVD to deposit a thickness of 0.5 microns on the front side of the silicon wafer. 0.2 micron silicon oxide.

[0035] 2. Make heating resistance wire. The pattern of the heating resistance wire and electrode is photo-etched on the front side, and the metal Ti / Pt is sputtered with a thickness of 0.01 / 0.3 microns, and then the single-fold heating resistance wire and the electrode for the lead are produced by using the lift-off (lift-off) process, and then heated in nitrogen Annealed at 350°C for half an hour under atmosphere.

[0036] 3. Fabricate a heating film with...

Embodiment 2

[0039] The top view of the front structure of the micro-heater described in this embodiment can be found in Figure 7 . Its production process is as follows:

[0040] 1. Fabricate a dielectric film on a silicon wafer. Select a P-type (100) silicon wafer, first thermally oxidize and grow silicon oxide with a thickness of 0.5 micron, and then use LPCVD to deposit silicon nitride with a thickness of 1 micron on the silicon wafer.

[0041] 2. Make heating resistance wire. First sputter metal Ti / Au with a thickness of about 0.01 / 0.2 microns, then pattern photolithography, use gold corrosion solution and titanium corrosion solution to make single-line heating resistance wires and electrodes for leads, and finally in a nitrogen atmosphere at 350 ℃ for half an hour.

[0042] 3. Fabricate a heating film with a mesh structure and support cantilever beams. Front photolithography, under the protection of photoresist, use RIE to dry-etch the composite film of silicon oxide and silicon...

Embodiment 3

[0045] The top view of the front structure of the micro-heater described in this embodiment can be found in Figure 8 . Its production process is as follows:

[0046] 1. Fabricate a dielectric film on a silicon wafer. An N-type (110) silicon wafer is selected, and silicon oxide with a thickness of 0.5 microns is deposited by LPCVD.

[0047] 2. Make heating resistance wire. First sputter the metal seed layer of titanium and platinum, then define two parallel bifold heating resistance wires and lead electrodes by photolithography, electroplate a layer of metal platinum with a thickness of 1 micron, and finally remove the photoresist and seed layer, And annealed at 350°C for half an hour under nitrogen atmosphere.

[0048] 3. Fabricate a heating film with a mesh structure and support cantilever beams. Front photolithography, under the protection of photoresist, use RIE to dry etch the silicon oxide film until the substrate silicon is exposed, and the etched place forms a mes...

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Abstract

The invention relates to a low-power consumption micro-heater with a mesh-structured heating film and a fabrication method thereof, and the micro-heater is characterized in that the micro-heater comprises the heating film with a mesh structure formed by regular arrangement of special-shaped meshes according to certain rules, the heating film is connected with a substrate frame through a support cantilever beam, and heating resistance wires are arranged on the heating film in the fold line way and connected with an electrode for a lead wire on the substrate frame through the support cantileverbeam. The structure can not only effectively reduce the heat conduction from the area of the heating film of the heater to the support cantilever beam, further reduce the power consumption of the device and expand the fabrication methods of the heater. The heater is particularly applicable to applications in the field of gas detection.

Description

technical field [0001] The invention relates to a low-power consumption micro-heater with a mesh structure heating film and a manufacturing method thereof, belonging to the field of micro-electromechanical systems (MEMS). Background technique [0002] Micro film heaters can be applied to many fields, such as gas detection, environmental monitoring and infrared light source. With the continuous promotion of applications, the requirements for low power consumption, low cost, high performance and high reliability of micro thin film heaters are becoming increasingly strong. The use of MEMS technology is more conducive to the low cost and low power consumption of the micro thin film heater. [0003] At present, micro thin film heaters based on silicon substrates can be divided into two types based on the structure of the central membrane area, which are closed membrane type and suspended membrane type. The boundary of the support film of the closed-film micro-thin film heater i...

Claims

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Application Information

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IPC IPC(8): H05B3/00H05B3/34B81C1/00
Inventor 李铁许磊王跃林
Owner HEFEI MICRO NANO SENSING TECH CO LTD
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