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Novel super-hard TiB2/c-BN nano multi-layer film prepared by magnetron sputtering technique

A nano-multi-layer and multi-layer film technology, which is applied in the direction of sputtering plating, coating, layered products, etc., can solve the problems of high melting point, small friction coefficient, high chemical stability, etc., to improve wear resistance, Effects of improving friction performance and improving production efficiency

Inactive Publication Date: 2010-08-11
TIANJIN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

TiB 2 Because of its extremely high melting point, high chemical stability, high hardness and excellent wear resistance, it is used as hard tool materials, abrasives, alloy additives and wear-resistant parts; c-BN has high hardness and small friction coefficient, etc. advantages are also widely applied, however, for TiB 2 / c-BN nano-multilayer film has not been reported yet

Method used

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  • Novel super-hard TiB2/c-BN nano multi-layer film prepared by magnetron sputtering technique
  • Novel super-hard TiB2/c-BN nano multi-layer film prepared by magnetron sputtering technique
  • Novel super-hard TiB2/c-BN nano multi-layer film prepared by magnetron sputtering technique

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Synthesis of TiB by Changing Modulation Ratio Combined with Substrate Heating Conditions 2 / c-BN nano multilayer film:

[0044] (1) Before the experiment, use acetone and absolute alcohol to treat Al 2 o 3 The slices were ultrasonically cleaned for 15 min, dried and then put into the magnetron sputtering coating chamber.

[0045] (2) Vacuum the chamber so that the background vacuum in the chamber is 2.0×10 -4 Pa~3.8×10 -4 Pa.

[0046] (3) Adjust the flapper valve so that the working air pressure is 6Pa. Use a mass flow meter to control the Ar intake flow to keep it at 80sccm. Turn on the bias power supply and adjust the base bias voltage -80V. The current is normal, and use Ar The ion-pair sample is bombarded and cleaned for at least 5 minutes, the bias power is turned off, and the flapper valve is adjusted to make the working air pressure 3Pa.

[0047] (4) Turn on the 500W radio frequency power supply, control the Ar intake flow rate with a mass flow meter to kee...

Embodiment 2

[0052] Synthesis of TiB under changing modulation ratio combined with substrate heating 2 / BN nano multilayer film:

[0053] Deposition parameters: substrate temperature controlled at 225°C, heating current 2.8A; modulation ratio 13:1 (TiB 2 : h-BN), the modulation modulation period is 24nm; the multilayer film is prepared from 25 to 32 layers, the Ar flow: 40 to 45 sccm; the background vacuum degree: 2.0×10 -4 Pa~3.8×10 -4 Pa; working pressure: 0.2Pa; RF sputtering source process parameters: RF target TiB 2 The sputtering power is 90W, and the h-BN sputtering power is 200W; the target base distance is 6cm, and the base bias voltage is -80V. The thickness of the Ti transition layer is 65nm, and the deposition time is controlled at about 1200s.

[0054] For the optimal conditions, the preparatory work before the experiment is as described in (1)-(5) above. From the modulation layer thickness and modulation ratio, the single-layer TiB 2 Thickness is 22.3nm, BN thickness is ...

Embodiment 3

[0056] in Al 2 o 3 (111) Deposit 40nm TiB on the substrate 2 As a transition layer, alternately deposit h-BN and TiB 2 As a multilayer film, the layer thickness per modulation period is 20nm, the modulation period of the multilayer film is 28 layers, and the total layer thickness is 500nm; where h-BN:TiB 2 The modulation ratio is 1:3.

[0057] For the optimal conditions, the preparatory work before the experiment is as described in (1)-(5) above. From the modulation layer thickness and modulation ratio, the single-layer TiB 2 Thickness is 22.3nm, BN thickness is 1.7nm, then according to TiB 2 And the deposition rate of BN, calculate their sputtering time. Set 25 modulation cycles back and forth between the two targets. The substrate temperature was maintained at 225°C. This way you can get the required TiB 2 / c-BN nano multilayer film

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Abstract

The invention provides a novel super-hard TiB2 / c-BN nano multi-layer film, a method for preparing the same and application thereof, wherein the method comprises the followings steps of: depositing 40 to 70 nanometers of TiB2 serving as a transitional layer on an Al2O3(111) substrate, and alternately depositing h-BN and TiB2 to prepare a nano multi-layer film, wherein the layer thickness in each modulation period is 20 to 25 nanometers, the modulation period of the multi-layer film is 8 to 32 layers, the total layer thickness is 500 and 800 nanometers, and a modulation ratio of the h-BN to the TiB2 is 1:3 to 1:16. The novel super-hard TiB2 / c-BN nano multi-layer film has the desirable comprehensive characteristics of high hardness, low internal stress, small frictional coefficient and high film-substrate bonding strength; and the novel super-hard TiB2 / c-BN nano multi-layer film has important application prospects in surface strengthening films of knife blade tools and dies.

Description

technical field [0001] The invention belongs to the field of surface strengthening films for various cutting tools and moulds. Especially related to a high vacuum magnetron sputtering system (MS) to prepare superhard TiB 2 / c-BN nano-multilayer film, and a new process for synthesizing an ultra-hard nano-multilayer surface strengthening film composed of titanium diboride and hexagonal boron nitride by magnetron sputtering technology. Background technique [0002] The nitrides and borides of transition metals are ceramics with special physical and chemical properties. Because of its extremely high melting point, high chemical stability, high hardness and excellent wear resistance, it is used as hard tool materials, abrasives, alloy additives and wear-resistant parts, etc. At the same time, this type of material has excellent electrical properties. It can be used as an inert electrode material and a high-temperature electrical material to attract attention. In recent decades...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06B32B9/00
Inventor 李德军董磊刘广庆刘孟寅邓湘云
Owner TIANJIN NORMAL UNIVERSITY
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