N-type lateral insulated gate bipolar device capable of reducing hot carrier effect

A bipolar device and hot carrier technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems affecting the service life of devices, and achieve the effects of prolonging degradation life, reducing carrier temperature, and reducing dose

Inactive Publication Date: 2010-09-15
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, because power semiconductor devices work at very high voltages, the hot carrier effect will cause the performance parameters of the device such as threshold voltage, on-resistance, and gain to degrade to varying degrees with the increase of use time, seriously affecting the device. service life

Method used

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  • N-type lateral insulated gate bipolar device capable of reducing hot carrier effect
  • N-type lateral insulated gate bipolar device capable of reducing hot carrier effect
  • N-type lateral insulated gate bipolar device capable of reducing hot carrier effect

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Embodiment Construction

[0024] Attached below figure 1 , the present invention is described in detail, a N-type lateral insulated gate bipolar device with reduced hot carrier effect, comprising: a P-type substrate 1, a buried oxygen 2 is arranged on the P-type substrate 1, and a buried oxygen 2 is provided with a P-type epitaxial layer 3, an N-type well 4 and a P-well region 13 are provided on the P-type epitaxial layer 3, an N-type buffer well 5 is provided on the N-type well 4, and an N-type buffer well 5 is provided on the N-type well 4. A P-type positive region 6 is provided, an N-type negative region 12 and a P-type body contact region 11 are provided on the P-well region 13, a gate oxide layer 10 is provided on the surface of the P-type epitaxial region 3, and the gate oxide layer 10 is formed from P The type epitaxial region 3 extends to the N-type well region 4, and a field oxide layer 8 is provided in the region other than the P-type anode region 6, the P-type body contact region 11, the N-...

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Abstract

The invention relates to an N-type lateral insulated gate bipolar device capable of reducing hot carrier effect. The N-type lateral insulated gate bipolar device capable of reducing the hot carrier effect comprises a P-type substrate; buried oxide is arranged on the P-type substrate, and is provided with a P-type epitaxial layer; the P-type epitaxial layer is provided with an N-type well and a P-well area, the N-type well is provided with an N-type buffering well which is provided with a P-type positive area, and the P-well area is provided with an N-type negative area and a P-type body contact area; and a field oxide layer, a metal layer, a gate oxide layer, a polysilicon gate and an oxide layer are arranged on the upper surface of the device. The device is characterized in that a P-type buried layer is arranged below the P-well area and above the buried oxide and is inserted into part of the P-type epitaxial layer to form a reversed L-type P-area together with the whole P-well area, and the structure can lead the hole current of the device to the bottom part so as to reduce the iron generation rate and longitudinal electric field in the channel area of the device and lower the temperature of thermion, thereby effectively inhibiting the hot carrier effect of the device.

Description

technical field [0001] The invention relates to the field of high-voltage power semiconductor devices, and relates to an N-type lateral insulated gate bipolar device suitable for high-voltage applications and reducing the effect of hot carriers. Background technique [0002] Power semiconductor devices are the basic electronic components for energy control and conversion in power electronic systems. The continuous development of power electronics technology has opened up a wide range of application fields for semiconductor power devices, and the characteristics of semiconductor power devices such as on-resistance and breakdown voltage determine The basic performance of power electronic system such as efficiency and power consumption. [0003] With the increasing demand for modern life, the performance of power integrated circuits has attracted more and more attention, and the life of power integrated circuits has increasingly become one of the most important performance indi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/36
Inventor 钱钦松孙虎孙伟锋庄华龙陆生礼时龙兴
Owner SOUTHEAST UNIV
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