Magnetoelectric random storage unit and storage with same

A random storage and memory technology, which is applied in the field of semiconductor manufacturing and design, can solve the problems of excessive power consumption of magnetic random access memory and the influence of neighboring cells, and achieve the effects of reducing write power consumption, improving storage density, and writing power consumption

Active Publication Date: 2010-09-15
TSINGHUA UNIV
View PDF2 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve at least one of the above-mentioned technical problems in the prior art, especially to solve the problem of excessive pow

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetoelectric random storage unit and storage with same
  • Magnetoelectric random storage unit and storage with same
  • Magnetoelectric random storage unit and storage with same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0063] Prepare the ferroelectric oxide layer 4 as lead niobate zincate-lead titanate (PZN-PT) with a thickness of 250nm, and deposit 5nm thick Fe with (001) orientation 0.7 co 0.3 The ferromagnetic free layer 5 of the alloy, the magnesium oxide (MgO) tunnel barrier layer 6 with a thickness of 1.5nm, and the ferromagnetic fixed layer 7 of the CoFeB alloy with a thickness of 25nm, the ferromagnetic free layer 5 and the tunnel barrier layer obtained by etching technology 6. The multilayer composite film structure of the ferromagnetic fixed layer 7 has a length of 1 μm and a width of 0.5 μm. Apply a voltage parallel to the film length direction in the ferroelectric oxide layer 4, Image 6 In this system, the resistance value of the interlayer structure 8 varies with the voltage applied to the ferroelectric oxide layer 4. In this system, the positive critical switching voltage U cr is 0.72V, the negative critical switching voltage U cr is 0.51V.

[0064] As shown in the above f...

no. 2 example

[0066] Prepare the ferroelectric oxide layer 4 as barium titanate (BTO) with a thickness of 250nm, deposit 5nm thick Fe with (001) orientation 0.7 co0.3 The ferromagnetic free layer 5 of the alloy, the magnesium oxide (MgO) tunnel barrier layer 6 with a thickness of 1.5nm, and the ferromagnetic fixed layer 7 of the CoFeB alloy with a thickness of 25nm, the ferromagnetic free layer 5 and the tunnel barrier layer obtained by etching technology 6. The ferromagnetic fixed layer 7 has a multilayer composite film structure with a length of 1 μm and a width of 0.5 μm. Apply a voltage parallel to the film length direction in the ferroelectric oxide layer 4, Figure 7 In this system, the resistance of the composite structure varies with the voltage applied to the ferroelectric oxide layer. In this system, the positive critical switching voltage U cr is 9.7V, the negative critical switching voltage U cr is 6.8V. As shown in the figure, due to the same principle as that of Embodiment ...

no. 3 example

[0068] Prepare a ferroelectric oxide layer of lead zirconate titanate (PZT) with a thickness of 250nm, deposit 5nm thick Fe with (001) orientation 0.7 co 0.3 Alloy ferromagnetic free layer, 1.5nm thick magnesium oxide (MgO) tunnel barrier layer, and 25nm thick CoFeB alloy ferromagnetic pinned layer, ferromagnetic free layer, tunnel barrier layer, ferromagnetic pinned layer obtained by etching technology The layer composite structure has a length of 1 μm and a width of 0.5 μm. Applying a voltage parallel to the lengthwise direction in the ferroelectric oxide layer, Figure 8 In this system, the resistance of the composite structure varies with the voltage applied to the ferroelectric oxide layer. In this system, the positive critical switching voltage U cr is 4.5V, the negative critical switching voltage U cr is 3.2V. As shown in the figure, due to the same principle as that of Embodiment 1, it shows that the random storage unit has non-volatile storage.

[0069] The embod...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Widthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a magnetoelectric random storage unit which comprises a ferroelectric oxide layer, a ferromagnetic free layer, a tunnel barrier layer, a ferromagnetic fixed layer, a first electrode and a second electrode, wherein the ferromagnetic free layer is formed on the ferroelectric oxide layer; the tunnel barrier layer is formed on the ferromagnetic free layer; the ferromagnetic fixed layer is formed on the tunnel barrier layer; the first electrode and the second electrode are formed on two sides of the ferroelectric oxide layer; and under the actions of the electric field applied to the ferroelectric oxide layer by the first electrode and the second electrode, the magnetization direction in the ferromagnetic free layer is controlled through the magnetoelectric coupling action. The invention also provides a storage with the magnetoelectric random storage unit. The embodiment of the invention can write in information data with the electric field, and has the advantages of nonvolatility, low write-in power consumption, high storage density and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing and design, in particular to a magnetoelectric random access memory unit and a random access memory with the magnetoelectric random access memory unit. Background technique [0002] Magnetic Random Access Memory (MRAM) is a non-volatile memory that utilizes the magnetoresistance effect for data storage. The magnetoresistance effect is the effect that the electrical resistance of a material changes under the action of a magnetic field. The three-layer structure composed of ferromagnetic layer, tunnel barrier layer and ferromagnetic layer is a typical structure with magnetoresistance effect. When the magnetization directions of the ferromagnetic layers above and below the tunnel barrier layer are consistent, the resistance of the structure is minimum. Under the action of a magnetic field, the magnetization direction in the ferromagnetic layer tends to be oriented towards the di...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L43/00H01L27/22
Inventor 南策文李峥舒立胡嘉冕王婧马静林元华
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap