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Multimode tunable CMOS (Complementary Metal Oxide Semiconductor) differential low noise amplifier

A low-noise amplifier and amplifier technology, applied in differential amplifiers, DC-coupled DC amplifiers, and improving amplifiers to reduce noise effects, etc., can solve problems such as large chip area and power consumption, affecting receiver sensitivity, and insufficient blocker suppression. , to achieve the effect of reducing chip area, low input reflection coefficient, and reducing influence

Inactive Publication Date: 2010-09-15
FUDAN UNIV
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The former can achieve better noise figure and gain, but the chip area and power consumption are larger
The latter can achieve multi-standard and multi-band coverage, but the suppression of Blocker is not good enough, which affects the sensitivity of the entire receiver

Method used

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  • Multimode tunable CMOS (Complementary Metal Oxide Semiconductor) differential low noise amplifier
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  • Multimode tunable CMOS (Complementary Metal Oxide Semiconductor) differential low noise amplifier

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Embodiment Construction

[0020] now attached figure 2 And attached image 3 Describe technical scheme of the present invention in detail

[0021] Such as figure 2 As shown, the multimode tunable CMOS differential low noise amplifier of the present invention includes an input matching network, a cascode amplifier circuit, and a tunable output LC resonant network. The adjustable input impedance matching network consists of the first inductor (Lg1), the second inductor (Lg2), the third inductor (Ls), the third capacitor (Cg1), the fourth capacitor (Cg2), the fifth capacitor (Cex1) and the Composed of six capacitors (Cex2), it realizes input impedance matching under different frequency bands of various wireless communication standards. Under low power consumption conditions, the fifth capacitor (Cex1) and the sixth capacitor (Cex2) are connected in parallel between the gate-source of the first NMOS transistor (M1) and the second NMOS transistor (M2) in the input matching network to reduce noise match...

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Abstract

The invention belongs to the technical field of wireless communication, in particular to a multimode tunable CMOS (Complementary Metal Oxide Semiconductor) differential low noise amplifier which can be applied to various wireless communication standards of DCS1800, PCS1900, WCDMA and Bluetooth. A cascode stage degrading inductance structure is adopted in the low noise amplifier in the invention, an LC resonance network is adopted as output, the frequency band can be adjusted by switching on or off an adjusting capacitor array, and the resonant frequency is changed by matching with the adjustment of an external input impedance matching network so as to ensure that the low noise amplifier works under different modes. The invention realizes that the front-end low noise amplifier in a multimode receiver has the advantages of low power consumption, low noise, tunable property, small chip area and the like.

Description

technical field [0001] The invention belongs to the technical field of wireless communication, and in particular relates to a low-noise amplifier for a front-end circuit of a wireless communication system receiver. Background technique [0002] With the continuous development of wireless communication technology and the emergence of new communication standards, it has become a trend to design adjustable or configurable multi-standard receivers. In a multi-standard receiver architecture, the front-end LNA plays a vital role as the first stage of a wireless communication receiver. The low noise amplifier amplifies the useful weak signal without deteriorating the signal-to-noise ratio as much as possible, and sends the signal to the next stage mixer for processing. [0003] figure 1 The position of the low noise amplifier in the wireless communication receiver is illustrated. As the first stage of the wireless communication receiver system, the performance of the low noise a...

Claims

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Application Information

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IPC IPC(8): H03F3/45H03F1/32H03F1/26
Inventor 路守领李波韩科峰杨姗姗江雯谭杰王俊宇
Owner FUDAN UNIV