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Double-layer structure deep-ultraviolet transparent conductive film and preparation method thereof

A technology of transparent conductive film and double-layer structure, which is applied in semiconductor/solid-state device manufacturing, coating, circuit, etc., and can solve the problems of difficult large-area film formation, expensive equipment, and high sheet resistance

Inactive Publication Date: 2012-05-23
LUDONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The equipment of pulsed laser deposition method is expensive, and it is difficult to form a large area film; Sn-doped β-Ga prepared by pulsed laser deposition method 2 o 3 The sheet resistance is too high, and there is still a long way to go before practical commercial applications

Method used

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  • Double-layer structure deep-ultraviolet transparent conductive film and preparation method thereof
  • Double-layer structure deep-ultraviolet transparent conductive film and preparation method thereof
  • Double-layer structure deep-ultraviolet transparent conductive film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1: 22nmITO / 50nmGa 2 o 3

[0020] The substrate is made of JGS1 far-ultraviolet optical quartz glass. The substrate is ultrasonically cleaned with acetone, alcohol and deionized water, and dried with a nitrogen gun. The purity of 99.99wt% Ga 2 o 3 The ceramic target is installed in a radio frequency cathode target slot in the magnetron sputtering chamber, and the SnO 2 / (In 2 o 3 +SnO 2 ) ratio of 10wt% ITO target is installed in a DC cathode target slot in the magnetron sputtering chamber. Put the cleaned JGS1 far-ultraviolet optical quartz glass into the substrate holder, and insert the substrate holder into the substrate tray in the sputtering chamber. Use a mechanical pump and a molecular pump to evacuate the sputtering chamber so that the vacuum degree of the sputtering chamber is less than 6.0×10 -4 Pa. Set the temperature controller, adjust the heating current to heat the substrate, and stabilize the substrate temperature at 250°C. Adjust the fl...

Embodiment 2

[0021] Example 2: 22nmITO / 40nmGa 2 o 3

[0022] The preparation process is the same as in Example 1, except that the radio frequency sputtering deposits Ga 2 o 3 The layer thickness is 40 nm. Using the above process to finally form a double-layer structure 22nmITO / 40nmGa 2 o 3 Deep UV transparent conductive film. The prepared double-layer structure 22nmITO / 40nmGa 2 o 3 The transmittance curve of the deep ultraviolet transparent conductive film in the range of 200-800nm ​​is as follows figure 2 shown. The optical transmittance (excluding substrate) at 280nm is 75.8%, the optical transmittance at 300nm (excluding substrate) is 82.6%, and the average transmittance (excluding substrate) in the 300-800nm ​​spectral range is higher than 86%. The surface resistance of the film is 334Ω, and the film resistivity is 2.07×10 -3 Ω.cm.

Embodiment 3

[0023] Example 3: 29nmITO / 50nmGa 2 o 3

[0024] The preparation process is the same as in Example 1, except that the substrate is made of JGS2 ultraviolet optical quartz glass, the substrate temperature is 300°C, the argon pressure of the sputtering gas is 1.0Pa, the RF sputtering power is 60W, the DC sputtering current is 140mA, and the DC sputtering voltage is 360V , sputter-deposited ITO layer thickness 29nm. Using the above process to finally form a double-layer structure 29nmITO / 50nmGa 2 o 3 Deep UV transparent conductive film. The prepared 29nmITO / 50nm Ga 2 o 3 The transmittance curve of the double-layer structure deep ultraviolet transparent conductive film in the range of 200-800nm ​​is as follows image 3 shown. The optical transmittance (excluding substrate) at 280nm is 70.9%, the optical transmittance at 300nm (excluding substrate) is 87.5%, and the average transmittance (excluding substrate) in the 300-800nm ​​spectral range is higher than 88%. The surface...

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Abstract

The invention relates to a tin-doped indium oxide (ITO) / gallium oxide (Ga2O3) double-layer structure deep-ultraviolet transparent conductive film and a preparation method thereof, and belongs to the technical field of electronic materials. The preparation method comprises the following steps: ultraviolet optical quartz glass is used as the substrate, and radio-frequency magnetron sputtering is carried out on the Ga2O3 ceramic target to prepare a Ga2O3 layer the thickness of which is 30-60 nm; and direct-current magnetron sputtering is carried out on an ITO target to prepare an ITO layer the thickness of which is 15-29 nm. The pressure intensity of argon gas for sputtering is 0.2-2 Pa, the power for radio-frequency sputtering is 50-100 W, the substrate temperature is 200-300 DEG C, the current for direct-current sputtering is 80-150 mA, and the voltage for direct-current sputtering is 200-400 V. The prepared film has the advantages of low resistivity, high transmittivity within the range of visible light, ultraviolet light and deep-ultraviolet light, and other favorable photoelectric properties. The film otained by the method of the invention has wide application prospects in the fields of ultraviolet photoelectric devices and the like.

Description

(1) Technical field: [0001] The invention relates to a double-layer structure deep ultraviolet transparent conductive film and a preparation method thereof, belonging to the technical field of electronic materials. (two) background technology: [0002] Deep ultraviolet light-emitting diodes are widely used in high-density optical recording, excitation light sources for biological and chemical sensors, security communications, space technology, medical treatment, and high-speed decomposition of public hazards. So far, the mainstream of deep ultraviolet light sources are excimer lasers and various frequency-doubled lasers and other gas and solid-mediated ultraviolet lasers and gas lamps, which have the disadvantages of large size, short life, and high price, making it difficult for practical application. Organic electroluminescent devices (OLEDs) have attracted widespread attention due to their high efficiency, high brightness, wide viewing angle, low power consumption, self-l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/56C23C14/35C23C14/08
Inventor 闫金良李厅张易军赵银女
Owner LUDONG UNIVERSITY
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