Voltage modulation mid-wavelength and long-wavelength two-color quantum well infrared detector and manufacturing method thereof

Abstract

The invention discloses a voltage modulation mid-wavelength and long-wavelength two-color quantum well infrared detector, comprising a semi-insulating semiconductor GaAs substrate, a first semiconductor GaAs contact layer, a first multi-quantum well infrared detector, a second semiconductor GaAs contact layer, a second multi-quantum well infrared detector, a third semiconductor GaAs contact layer, an upper contact electrode and a lower contact electrode. The first semiconductor GaAs contact layer is prpared on the semi-insulating semiconductor GaAs substrate; the first multi-quantum well infrared detector is arranged on the first semiconductor GaAs contact layer and is provided with a table top at one side of the first semiconductor GaAs contact layer; the second semiconductor GaAs contact layer is prepared on the first multi-quantum well infrared detector; the second multi-quantum well infrared detector is prepared on the second semiconductor GaAs contact layer; the third semiconductor GaAs contact layer is prepared on the second multi-quantum well infrared detector; the upper contact electrode and the lower contact electrode are respectively prepared on the table top which is formed by the third semiconductor GaAs contact layer and the first semiconductor GaAs contact layer.

Description

technical field [0001] The invention relates to the field of semiconductor material growth and device manufacturing, in particular to the structural design, material growth and device manufacturing methods of a voltage-modulated medium-long-wave double-color quantum well infrared detector. Background technique [0002] Infrared detection is a technology widely used in communication, remote sensing, investigation, early warning and other fields. Two-color detection can respond to the infrared radiation information of the target in two different bands at the same time, which is beneficial to expand the detection range, improve the detection sensitivity, improve the anti-interference ability of the infrared system and the ability to identify camouflage and eliminate false targets, so it is becoming a new technology. Direction of development. [0003] III-V material quantum well infrared detector, because compared with HgCdTe infrared detector, it has mature material growth tec...

AI Technical Summary

Problems solved by technology

However, this method needs to etch three layers, and each pixel needs to lead out three electrodes. The device manufacturing process, especially when making multi-color large area array devices, is very complicated, which greatly increases the cost.

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