Indium-arsenic quantum dot active region structure and light emitting device

Abstract

The invention relates to an indium-arsenic (InAs) quantum dot active region structure. The structure comprises n InAs quantum dot layers (1), wherein n is greater than or equal to 1 and is a natural number; and an InGaAs layer and an InAs quantum dot layer in which an In component is increased linearly and an InGaAs layer and a cover layer in which the In component is decreased linearly are grown on each of the indium-arsenic quantum dot layers (1) in turn epitaxially from the top to the bottom. The invention also relates to an InAs quantum dot light emitting device, in which a GaAs buffer layer, a lower cladding layer, a lower limit waveguide layer, the InAs quantum dot active region structure, an upper limit waveguide layer, an upper cladding layer and an ohmic contact layer are epitaxially grown a GaAs substrate from the bottom to the top in turn. The InAs quantum dot active region structure and the light emitting device can reduce a pressure stress born by InAs quantum dots, inhibit the precipitation of indium in the quantum dots, reduce the accumulated strain of a quantum dot active region structure, and reduce defects and malposition. Therefore, the InAs quantum dots and a corresponding light emitting device have higher luminous efficiency and luminous intensity.

Description

technical field [0001] The invention relates to an indium arsenic (InAs) quantum dot light-emitting device, specifically including an InAs quantum dot semiconductor laser, a semiconductor light-emitting diode, a superluminescent light-emitting tube and a semiconductor optical amplifier. Background technique [0002] The structure of quantum dots is an important part of energy band engineering, and it is also a frontier research hotspot. Compared with bulk materials, quantum wells, and quantum wires, quantum dots, as a zero-dimensional semiconductor material, have separated energy levels and density of states distribution similar to atoms, and carriers are subject to strong quantum forces in three dimensions. confinement, its electrical and optical properties are significantly improved. Therefore, light-emitting devices such as semiconductor lasers, semiconductor light-emitting diodes, superluminescent light-emitting tubes, and semiconductor optical amplifiers with quantum d...

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Problems solved by technology

On the other hand, In x Ga 1-x Excessively large In component x of As will also reduce the barrier height of InAs quantum dots, and the quantum confinement effect will be weakened, resulting in a decrease in luminous intensity [reference Zongyou Yin and Xiaohong Tang, Effects of In x Ga 1-x As matrix layer on InAsquantum dot formation and their emission wavelength. Journal of Applied Physics Letters. Volume100(2006), page 033109]

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