Unlock instant, AI-driven research and patent intelligence for your innovation.

Device for detecting plasma immersion implantation dosage

A plasma and immersion implantation technology, applied in the field of plasma, can solve problems such as infeasibility, fluctuation, difficulty and tediousness, etc., and achieve the effects of simple and precise control, improved precision, and simple procedures

Inactive Publication Date: 2012-01-18
FUDAN UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Accurate determination of plasma density n 0 It is very difficult and cumbersome. At present, the ion chromatography method and the Langmuir dual-probe system mainly used to measure the plasma density have large errors, and the measurement changes at different positions of the cavity (such as the axial and radial positions of the cavity) , will make n 0 produce great fluctuations
In addition n 0 Affected by multiple parameters such as gas type and coupling power, when the injection parameters change, it is necessary to re-measure n 0 , making this method complicated and impracticable

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for detecting plasma immersion implantation dosage
  • Device for detecting plasma immersion implantation dosage
  • Device for detecting plasma immersion implantation dosage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This embodiment describes the specific means of implementation. During plasma immersion injection, the RF source in the cavity is coupled to generate plasma. At this time, when a voltage is applied to the external lead, the external detection equipment can detect the loop current and voltage through the high-voltage probe. Then the dose injection information at this point is obtained through data processing. The movement of the signal collector on the target stage is realized by rotating the outer lead, so as to obtain the ion implantation dose information at each point of the target stage. From this, the dose of the plasma immersion implant was determined.

Embodiment 2

[0036] This example illustrates the application in surface modification of stainless steel. For example, if the parameters are set as nitrogen atmosphere of 0.5Pa, RF source coupling power of 80W, working voltage of negative pulse high voltage, its voltage of 20kV, pulse width of 20μs, and frequency of 50Hz, if the external measuring device is an oscilloscope, measure Get the current and voltage diagram as attached Figure 4 . From this, it can be calculated that the ion implantation dose at this position is 6.54E+14min -1 cm -2 .

Embodiment 3

[0038] This example illustrates the implantation of oxygen into a silicon wafer while simulating the SIMOX process. This method is used to precisely control the injected dose. Under different experimental conditions, such as changing the air pressure of the plasma chamber (10 -2 Pa~1Pa), coupling power (50W~200W). At this time, the need to re-measure the plasma density when the plasma state changes is avoided. The ion dose implantation rate at each position can be calibrated by this device. Based on the results, the overall injection time can be set to obtain precise control of the injection dose.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of plasma and in particular relates to a device for detecting a plasma immersion implantation dosage. The device comprises a signal acquisition device, a lead and a peripheral measuring device, wherein the signal acquisition device is arranged on a target platform in a cavity; the signal acquisition device has a double-layer structure of a conductive metal sheet and an insulator substrate; and the lead has a rigid structure and is used for connecting the signal acquisition device and the peripheral measuring device. The device makes the signal acquisition device move on the target platform by controlling the lead to rotate so as to acquire ion implantation dosage information of each point of the target platform so the distribution information of the ion implantation dosage on the target platform is acquired. The device solves the complexity problem that the dosage is measured by detecting the concentration of the plasma and improves the accuracy. The device can be applied to various derivational plasma immersion implantation devices.

Description

technical field [0001] The invention belongs to the field of plasma technology, in particular to an accessory device for calibrating and testing plasma injection dose in plasma immersion injection equipment. Background technique [0002] Plasma immersion implantation technology is a new type of ion implantation technology produced in the 1980s, which is widely used in the fields of material surface modification and semiconductor material preparation. Plasma immersion implantation equipment has changed the line-of-sight characteristics of traditional ion beam implantation, and has been widely used and developed. Plasma immersion implantation equipment as attached figure 1 As shown, it mainly includes three parts: plasma radio frequency source, vacuum cavity and high voltage power supply. During ion implantation, the radio frequency source couples the ionization of the gas in the cavity to generate plasma, and the negative high voltage power applied to the target platform ac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/48
Inventor 吴晓京王一鹏张昕卢茜
Owner FUDAN UNIV