Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing crystalline silicon solar cell selective emitter junction

A solar cell and selective technology, applied in crystal growth, chemical instruments and methods, circuits, etc., can solve the problems of poor industrial practicability and high cost, reduce the influence of the life of the minority carrier of silicon wafers, save production costs, and be suitable for promotion. applied effect

Active Publication Date: 2010-12-15
CSI CELLS CO LTD +1
View PDF5 Cites 40 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this one-time diffusion process requires the use of additional laser equipment, which is costly and currently only stays in the laboratory stage, with poor industrial applicability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A method for preparing a selective emission junction of a crystalline silicon solar cell includes the following steps:

[0036] Firstly, a diffusion mask is grown on the textured surface of the crystalline silicon wafer, and then the electrode gate line area is etched and grooved; then a diffusion process is used to form a heavily doped area in the electrode gate line area and at the same time to form a shallow doped area in the non-electrode gate line area Miscellaneous area; the first diffusion process includes the following steps:

[0037] (1) Into the boat: Push the quartz boat loaded with silicon wafers into the diffusion furnace tube; the time to enter the boat is controlled at 6min, the temperature is set at 860℃, and the nitrogen flow rate is 12L / min;

[0038] (2) Temperature stability: Stabilize the temperature in the diffusion furnace tube; the temperature stability time is controlled at 10min, the temperature is set at 860℃, and the nitrogen flow rate is 12L / min;

[...

Embodiment 2

[0046] A method for preparing a selective emission junction of a crystalline silicon solar cell includes the following steps:

[0047] Firstly, a diffusion mask is grown on the textured surface of the crystalline silicon wafer, and then the electrode gate line area is etched and grooved; then a diffusion process is used to form a heavily doped area in the electrode gate line area and at the same time to form a shallow doped area in the non-electrode gate line area Miscellaneous area; the first diffusion process includes the following steps:

[0048] (1) Into the boat: Push the quartz boat loaded with silicon wafers into the diffusion furnace tube; the time to enter the boat is controlled at 6min, the temperature is set at 875℃, and the nitrogen flow rate is 12L / min;

[0049] (2) Temperature stability: Stabilize the temperature in the diffusion furnace tube; the temperature stabilization time is controlled at 10min, the temperature is set at 875℃, and the nitrogen flow rate is 12L / min...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a crystalline silicon solar cell selective emitter junction. The method comprises the following steps of: growing a diffusion mask on a textured surface of a crystalline silicon wafer; etching and slotting an electrode gate line region; forming a heavily doped region at the electrode gate line region by using primary diffusion technology; and forminga lightly doped region at a non-electrode gate line region; the primary diffusion technology comprises the following steps of: (1) feeding a boat; (2) stabilizing a temperature; (3) performing high temperature diffusion: carrying phosphorus oxychloride into a diffusion furnace tube through nitrogen gas for diffusing; (4) performing high temperature propulsion: introducing the oxygen to perform diffusion and then redistributing; (5) stabilizing the temperature: reducing the temperature to 20 to 120 DEG C to stabilize the temperature in the diffusion furnace tube; (6) performing low temperaturepropulsion: introducing the oxygen to perform the diffusion and then redistributing; and (7) withdrawing the boat. By the method, square resistance of the heavily doped region can be controlled below40 ohms and the square resistance of the lightly doped region can be controlled over 50 ohms so as to realize the preparation of the crystalline silicon solar cell selective emitter junction.

Description

Technical field [0001] The invention relates to a method for preparing a crystalline silicon solar cell, in particular to a method for preparing a selective emission junction of a crystalline silicon solar cell. Background technique [0002] In today's world, the continuous use of conventional energy has brought about a series of economic and social problems such as energy shortage and environmental degradation. The development of solar cells is one of the ways to solve these problems. Therefore, countries all over the world are actively developing solar cells, and high conversion efficiency and low cost are the main trends in the development of solar cells and the goals pursued by technical researchers. [0003] At present, among various types of solar cells, crystalline silicon solar cells account for 90% of the market share. Among them, the conversion efficiency of monocrystalline silicon cells exceeds 17%, and the conversion efficiency of polycrystalline silicon cells also exce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18C30B31/08
CPCY02P70/50
Inventor 吴坚王栩生章灵军
Owner CSI CELLS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com