Method for preparing nitrogen-yttrium-zirconium hard coating with nano structure on surface of hard alloy substrate
A cemented carbide substrate, nanostructure technology, applied in metal material coating process, coating, ion implantation plating and other directions, can solve problems such as difficult to meet the needs of modern industry
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0020] 1. Substrate pretreatment:
[0021] (1) Grinding and polishing: Carry out sufficient rough and fine grinding on the 600 mesh and 1200 mesh diamond grinding wheel discs of the cemented carbide substrate respectively. The time of coarse and fine grinding is controlled at about 10 minutes, the speed is 500r / min, coarse and fine grinding In between, the sample must be fully ultrasonically cleaned (ultrasonic cleaning time is 2min) and dried in an oven to remove abrasive debris and oil; after the sample is ground, it is polished with W2.5 diamond polishing powder. The polishing time is 10 minutes.
[0022] (2) Ultrasonic cleaning: The polished substrate is cleaned in the following order: acetone ultrasonic cleaning for 5 minutes → absolute ethanol ultrasonic cleaning for 5 minutes → drying for use.
[0023] (3) Ion source cleaning: Before sputtering deposition, first use Hall ion source to clean the substrate, the pressure of ion cleaning is 2×10 -2 Pa, substrate temperature 300℃,...
Embodiment 2
[0030] 1. Substrate pretreatment: the same as in Example 1.
[0031] 2. Pre-sputtering: the same as in Example 1.
[0032] 3. Sputtering deposition: After pre-sputtering, argon and nitrogen are introduced, the total flux is 60sccm, the nitrogen flow rate is 20%, the deposition working pressure is 0.3Pa, the DC power supply of the Zr target is 250W, Y The radio frequency power of the target material is 100W, the sputtering time is 90min, and the substrate temperature is 300°C. After the deposition is completed, the sample is taken out and stored in a desiccator for characterization and analysis. After the deposition is completed, the sample is taken out and stored in a desiccator for characterization and analysis.
[0033] image 3 The XRD pattern of the coating shows that the prepared coating has a face-centered cubic structure. The coating crystal grain size test method is the same as in Example 1, and the coating crystal grain size is calculated to be 17 nm.
[0034] 4. The chemi...
Embodiment 3
[0037] 1. Substrate pretreatment: (1) Grinding and polishing: the same as in Example 1. (2) Ultrasonic cleaning: same as Example 1. (3) Ion source cleaning: same as Example 1.
[0038] 2. Pre-sputtering: the same as in Example 1.
[0039] 3. Sputtering deposition: After pre-sputtering, argon and nitrogen are introduced, the total flux is 60sccm, the nitrogen flow rate is 15%, the deposition working pressure is 0.4Pa, and the DC power supply of the Zr target is 250W, Y The target's radio frequency power supply power is 150W, the sputtering time is 90min, and the substrate temperature is 300°C. After the deposition is completed, the sample is taken out and stored in a desiccator for characterization and analysis. After the deposition is completed, the sample is taken out and stored in a desiccator for characterization and analysis.
[0040] Figure 4 The XRD pattern of the coating indicates that the prepared coating has a face-centered cubic structure. The coating crystal grain si...
PUM
Property | Measurement | Unit |
---|---|---|
particle size | aaaaa | aaaaa |
hardness | aaaaa | aaaaa |
particle size | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com