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HgCdTe mid-wavelength photovoltaic detection chip integrated with hydrogen plasma dip coating

A plasma, mercury cadmium telluride technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as unsatisfactory physical properties of the chip surface, and achieve improved dynamic impedance and optoelectronic performance, high integration, and simple structure and process. Effect

Active Publication Date: 2011-11-02
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

[0006] Based on the above existing ion implantation n + - On-p-type mercury cadmium telluride infrared focal plane array chip surface physical properties are not ideal, the purpose of the present invention is to provide a HgCdTe infrared mid-wave photovoltaic detection chip with improved surface physical properties

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  • HgCdTe mid-wavelength photovoltaic detection chip integrated with hydrogen plasma dip coating
  • HgCdTe mid-wavelength photovoltaic detection chip integrated with hydrogen plasma dip coating
  • HgCdTe mid-wavelength photovoltaic detection chip integrated with hydrogen plasma dip coating

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Embodiment Construction

[0014] Ion implantation below to integrate low energy plasma hydrogen immersion coating n + -on-p Hg 1-x CD x Te (x=0.295) infrared mid-wave photovoltaic detection chip is an embodiment, and in conjunction with the accompanying drawings the specific implementation of the present invention is described in further detail:

[0015] See figure 1 , n of the integrated low-energy plasma hydrogen immersion coating of the present invention + -on-p-type HgCdTe infrared mid-wave photovoltaic detection chip includes: infrared substrate 1, p-type active region 2 of photosensitive element, n-type region 3 of photosensitive element, hydrogen plasma immersion coating layer 4 on the surface of p-type region , the hydrogen plasma immersion coating layer 5 on the surface of the n-type region, the passivation dielectric film 6 of the detection chip, the photosensitive element electrode 7 on the surface of the n-type region, the common electrode 8 on the surface of the p-type region, and the h...

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Abstract

The invention discloses an ion implantation n<+>-on-p type HgCdTe mid-wavelength photovoltaic detection chip integrated with a hydrogen plasma dip coating, which relates to photoelectric detection appliance technology. The invention adopts the technical scheme that: the ion implantation n<+>-on-p type HgCdTe mid-wavelength photovoltaic detection chip is formed by integrating a low-energy hydrogenplasma dip coating to an HgCdTe thin film material surface so as to effectively solve the problem of reduction in the dynamic impedance and detection performance of photosensitive element diodes caused by non-ideal physical properties of the surface of a conventional HgCdTe infrared focal plane array mid-wavelength photovoltaic detection chip. The ion implantation n<+>-on-p type HgCdTe mid-wavelength photovoltaic detection chip has the characteristics of simple structural process and high integration level.

Description

technical field [0001] The invention relates to photodetection device technology, in particular to an ion implantation method for integrating low-energy plasma hydrogen immersion coating + -on-p type mercury cadmium telluride (HgCdTe) infrared mid-wavelength photovoltaic detection chip. Background technique [0002] Infrared focal plane array device is an advanced imaging sensor with both infrared information acquisition and information processing functions. There are important and extensive applications in military and civilian fields. Due to its irreplaceable status and role, major industrial countries in the world have listed HgCdTe infrared focal plane array device manufacturing technology as a high-tech project for key development. [0003] Driven by advanced infrared application systems, infrared detection technology has entered an important development stage of the third generation of infrared focal plane detectors characterized by large area array, miniaturization ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/144H01L31/101H01L31/02
Inventor 叶振华胡伟达殷建军吴廷琪晨昱邢雯林春胡晓宁丁瑞军何力
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI