Self-aligned spacer multiple patterning methods

A multi-patterning and spacer technology, which is applied in the photoengraving process, instruments, optomechanical equipment and other directions of the pattern surface, which can solve the problems of cost inefficiency and so on.

A multi-patterning and spacer technology, which is applied in the photoengraving process, instruments, optomechanical equipment and other directions of the pattern surface, which can solve the problems of cost inefficiency and so on.

CN101963755AInactive Publication Date: 2011-02-02ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Self-aligned spacer multiple patterning methods
  • Self-aligned spacer multiple patterning methods
  • Self-aligned spacer multiple patterning methods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0073] L1 photoresist polymer (poly(IAM / α-GBLMA / ODOTMA / HAMA)) synthesis

[0074] 10.51 g of 2-methyl-acrylate 1-isopropyl-adamantyl (IAM), 6.82 g of 2-methyl-acrylate 2-oxo-tetrahydro-furan-3yl ester (α-GBLMA), 6.36 g 2-Methyl-acrylic acid 3-oxo-4,10-dioxo-tricyclo[5.2.1.0 2，6 ] Dec-8-yl ester (ODOTMA) and 6.31 g of 3-hydroxy-adamantyl 2-methyl-acrylate (HAMA) were dissolved in 27 g of tetrahydrofuran (THF). The mixture was degassed by bubbling nitrogen gas for 20 min. A 500 ml ampoule equipped with a condenser, nitrogen gas inlet and mechanical stirrer was charged with 11 g of THF and the solution was warmed to a temperature of 67°C. 5.23 g of dimethyl-2,2-azobisisobutyrate (17 mol % based on the whole monomer) were dissolved in 5 g of THF and filled into an ampoule. The monomer solution was flowed into the reactor at a rate of 16.0 milliliters per hour (mL / h) for 3 hours and 30 minutes. The polymerization mixture was stirred for an additional 30 minutes at 67°C. 5 g of ...

Embodiment 2-18

[0088] The above procedure of Reference Example 1 was repeated except that the ingredients listed in Table 1 below were used instead of TAEA and TERGITOL TMN-6 surfactant.

[0089] Table 1

[0090] Example

[0091] It is expected that spacer structures will form after L2 development.

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Abstract

Self-aligned spacer multiple patterning method are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

Description

[0001] 61 / 269,600 filed June 26, 2009, 61 / 281,553 filed November 19, 2009, and Priority to U.S. provisional application 61 / 281,681, the entire contents of which applications are hereby incorporated by reference. technical field [0002] The present invention relates generally to the fabrication of electronic devices. More specifically, the present invention relates to methods of forming electronic devices using self-aligned spacer lithography. The invention has particular utility in the fabrication of semiconductor devices for forming high density photolithographic patterns and features. Dual or higher order patterning can be performed according to the present invention. Background technique [0003] In the semiconductor manufacturing industry, photoresist materials are used to transfer images to one or more underlying layers, such as metal, semiconductor or dielectric layers deposited on a semiconductor substrate, as well as the substrate itself. To increase the integrat...

Claims

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Application Information

Patent Timeline
02 Feb 2011
Publication
CN101963755A
IPC
G03F7/00; H01L21/027; G03F7/40; G03F7/30; G03F7/20; H01L27/04
CPC
G03F7/40; H01L21/0273; H01L21/0337; G03F7/0035; H01L21/0338; H01L21/0274
Inventors
Y·C·裴; T·卡多拉西亚