Rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor

Abstract

The invention relates to a rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor which comprises a cell area, a terminal area and a transition area, wherein the terminal area is arranged at the outermost periphery of a chip; the transition area is positioned between the cell area and the terminal area; the bottoms of the cell area, the transition area and the terminal area (III) are provided with drain electrode metal; a heavy doping n-type silicon substrate is arranged on the drain electrode metal and used as a drain area of the chip; an n-type doping epitaxial layer is arranged on the heavy doping n-type silicon substrate; and a discontinuous p-type doping columnar semiconductor area is arranged in the n-type doping epitaxial layer. The rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor is characterized in that an n-type heavy doping semiconductor area is arranged in a second p-type doping semiconductor area in thetransition area, and the surface of the n-type heavy doping semiconductor area is provided with a contact hole which is connected with a metal layer to form a ground contact electrode of the chip. The invention can effectively reduce the reverse recovery charge of a device and improve the reverse recovery characteristics under the conditions of not increasing the process cost or changing the mainparameter of the device.

Description

technical field [0001] The invention relates to a high-voltage power metal oxide semiconductor device made of silicon, more precisely, a high-voltage superjunction vertical double-diffused metal oxide semiconductor field effect transistor made of silicon. Background technique [0002] At present, power devices are more and more widely used in daily life, production and other fields, especially power metal oxide semiconductor field effect transistors, because they have faster switching speed, smaller drive current, and wider safe operating area , so it has been favored by many researchers. Nowadays, power devices are developing rapidly in the direction of increasing operating voltage, increasing operating current, reducing on-resistance and integration. Among many power MOSFET devices, especially in vertical power MOSFETs, the invention of super junction semiconductor power devices overcomes the on-resistance of traditional power MOSFETs The contradiction between the breakd...

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Problems solved by technology

[0003] However, referring to figure 2 , in traditional superjunction vertical double-diffused metal-oxide-semiconductor transistors, the junction area of ​​the body diode is significantly larger than that of the vertical double-diffused metal-oxide-semiconductor field effect transistor. A large number of minority carriers are injected into the side to store a large amount of charge, resulting in a lot of reverse recovery charges when the source and drain of the device are reverse biased, and the p-column and n-column can be completely depleted at a lower reverse bias voltage. Therefore, when the source and drain are reverse biased, the reverse recovery charge must be completely eliminated in a short time, resulting in a rapid change in the reverse recovery current flowing through the body diode, that is, the existence of the body diode restricts the reverse recovery characteristics of the device.

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