133results about How to "No increase in difficulty" patented technology

Disclosed is a decomposition calculating method of the optimal power flow of a power system with a unified power flow controller. The method is characterized by comprising the following steps of firstly obtaining steady-state operating parameters required by the power flow calculation of the power system; secondly, determining the mounting position and the control parameter range of the unified power flow controller; thirdly, based on network equivalence, equalizing the branches of the unified power flow controller to two PQ nodes containing control targets; fourthly, utilizing taboo research to perform multiple optimal power flow calculation to determine an active control target of the unified power flow controller; and fifthly, calculating the control parameters according to the obtained control target of the unified power flow controller and the operation state of the system. The decomposition calculating method of the optimal power flow system with the unified power flow controller can equivalently decompose the optimal power flow calculation problem of the power system with the unified power flow controller into a two-layer optimization problem through network, can perform the optimal power flow calculation of the power system more effectively and more reliably, and has engineering use value.

The invention relates to a rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor which comprises a cell area, a terminal area and a transition area, wherein the terminal area is arranged at the outermost periphery of a chip; the transition area is positioned between the cell area and the terminal area; the bottoms of the cell area, the transition area and the terminal area (III) are provided with drain electrode metal; a heavy doping n-type silicon substrate is arranged on the drain electrode metal and used as a drain area of the chip; an n-type doping epitaxial layer is arranged on the heavy doping n-type silicon substrate; and a discontinuous p-type doping columnar semiconductor area is arranged in the n-type doping epitaxial layer. The rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor is characterized in that an n-type heavy doping semiconductor area is arranged in a second p-type doping semiconductor area in the transition area, and the surface of the n-type heavy doping semiconductor area is provided with a contact hole which is connected with a metal layer to form a ground contact electrode of the chip. The invention can effectively reduce the reverse recovery charge of a device and improve the reverse recovery characteristics under the conditions of not increasing the process cost or changing the main parameter of the device.

The invention discloses a long-acting melt-blown polypropylene composite electret material for mask melt-blown cloth and a preparation method of the long-acting melt-blown polypropylene composite electret material. The long-acting melt-blown polypropylene composite electret material comprises the following components in parts by weight: 100 parts of polypropylene resin, 0.1 to 10 parts of a fluorosilicone polymer, 0.01 to 2 parts of an inorganic charge enhancer, 0.1 to 2 parts of a lubricant, and 0.01 to 0.3 part of an antioxidant, wherein the fluorosilicone polymer is fluorine-containing polysiloxane taking a silicon-oxygen bond as a main chain and fluoroalkyl as a side chain. In the long-acting melt-blown polypropylene composite electret material for mask melt-blown cloth, a silicon-oxygen main chain of the fluorosilicone polymer is smooth, increase of the charge injection depth can be facilitated, a fluoroalkyl side chain promotes charge capture, meanwhile, dipole directional arrangement is generated, a main chain can be masked, a cloth cover is endowed with good hydrophobicity, the material has a good electret effect, and the long-term effect of the material is effectively improved. Moreover, the fluorosilicone polymer is low in melting point and is uniformly dispersed, so that the melt-blown polypropylene composite electret material is relatively simple to process and form.

The invention relates to a super junction high-voltage power device structure. A power semiconductor device many be influenced by a junction curvature effect to cause aggregation of an electric field close to a junction, so that a device is extremely easy to break down; and thus, the voltage withstanding degree of the device is required to be improved. The super junction high-voltage power device structure comprises an active region and a terminal region, wherein an epitaxial layer of a first conduction type material is arranged on a substrate layer; a composite buffer layer is formed on the epitaxial layer and comprises first semiconductor regions constituted by the first conduction type material and second semiconductor regions constituted by a second conduction type material, and the second semiconductor regions and the first semiconductor regions are arranged alternately; a well region of a second conduction type is positioned on the surface of the second semiconductor region, and is between two first semiconductor regions or between the final first semiconductor region and a cut-off ring. According to the super junction high-voltage power device structure, the withstanding voltage and the reliability of the terminal of the super junction device can be improved, so that withstanding voltage close to that of a cell region can be born by the terminal; and the structure can be realized by using the conventional super junction semiconductor manufacturing process without increasing the difficulty and the production cost of the process.

The invention discloses a method and device for eliminating mutual inductance coupling electromagnetic interference; the method of the invention comprises the steps that: after a current signal on the power line of a strong current interference source system is detected and converted into a voltage signal, amplitude amplification is carried out to the normal phase or the reversed phase of the measuring conversion voltage signal and the voltage signal is converted into an output current signal, the value of which is not affected by the load; then the output current signal is converted into an offsetting signal which is equal to an interfering signal in amplitude and contrary to the interfering signal in phase; and the offsetting signal is injected into the loop of a weak current device to offset the interfering voltage inducted by the strong current interference source system to the loop of the weak current device by inductance coupling. The method of the invention dexterously brings in a voltage/current switching circuit, thereby overcoming the influence of the loop impedance of the weak current device on the offsetting effects and enlarging the application scope of the mutual inductance coupling offsetting method. The method and the device of the invention has low power consumption and cost, overcomes the defect that EMI filtering can not remove the interfering signals with the same frequency; compared with a shielding method, hardware devices required by the invention has smaller volume and lighter weight, thus not increasing the difficulty of system layout.

The invention discloses a formation method of a transistor. The method comprises the following steps: providing a semiconductor substrate including a first area, wherein a dielectric layer is formed on the surface of the semiconductor substrate, and the dielectric layer is internally provided with a first groove exposing a part of the surface of the first area of the semiconductor substrate; forming a gate medium material layer on the surface of the inner wall of the first groove and the dielectric layer; forming a protective material layer on the gate medium material layer; forming an adherence material layer on the protective material layer by use of a physical vapor deposition technology; forming a first work function material layer by use of an atomic layer deposition technology, wherein the material of the adherence material layer is the same as the material of the first work function material layer; forming a grid metal layer on the first work function material layer, wherein the grid metal layer fills up the groove; and performing planarization processing on the grid metal layer, the first work function material layer, the adherence material layer, the protective material layer and the grid medium material layer by taking the surface of the dielectric layer as a stop layer so as to form a first grid structure disposed in the first groove. The method provided by the invention can improve the performance of the transistor.

The utility model relates to a method for forming a dual-depth trench, which includes the steps that: a semiconductor substrate, which sequentially consists of a silicon substrate, a buried oxide layer, a barrier layer and an oxide layer, is provided; the semiconductor substrate comprises a pixel area and a peripheral area; a photoresist pattern is formed on the oxide layer; with the photoresist pattern as a mask, the oxide layer is implanted with ions and annealed, so that an ion-implanted layer is formed in the oxide layer of the peripheral area; the oxide layer, the barrier layer, the buried oxide layer and the silicon substrate are etched, so that a first trench and a second trench are formed; and the depth of the first trench is smaller than the depth of the second trench. The invention can effectively increase the image quality of a CMOS image sensor.

The invention relates to a retinal prosthesis with a spherical arc substrate. The retinal prosthesis comprises a microelectrode array, a microelectrode array outgoing line portion and an external electrical stimulation lead-in portion. The retinal prosthesis is mainly technically characterized in that the microelectrode array is arranged on the surface of the spherical arc retinal prosthesis. The center of the retinal prosthesis is more effectively fitted with the surface of the retinal prosthesis by the aid of the microelectrode array on the surface of the spherical arc retinal prosthesis, a microelectrode is arranged on a spherical arc convex surface, so that the microelectrode can effectively contact with the surface of the retinal prosthesis, electrical stimulation efficiency is improved, stimulation current of the microelectrode array on the surface of the retinal prosthesis is reduced, the service time of the microelectrode array is prolonged, the retinal prosthesis is effectively protected, and spherical arc polychlorostyrene with biocompatibility replaces xylene materials and serves as a flexible substrate, so that manufacture and implantation of the electrode array are facilitated.

The invention discloses a permanent magnet, a permanent magnet motor and a compressor. The permanent magnet has the maximum length L1 and the maximum width W1. The working area of the permanent magnet is S, wherein the working area S, the maximum length L1 and the maximum width W1 meet the relational expression that S is smaller than L1*W1. According to the permanent magnet, the performance of the motor can be improved, the material cost can be saved, the rotor assembling difficulty of a rotor will not be increased, and therefore the cost performance of the motor is improved.

The invention relates to a Chinese character input method which inputs a Chinese character by combination of syllables and strokes of the Chinese character. The strokes of the Chinese character are divided into a basic stroke, a combined stroke and a combined component; the basic stroke comprises a point, a horizontal stroke, a vertical stroke, an oblique stroke and a turning stroke; the combined stroke comprises a combined point, a combined horizontal stroke, a combined vertical stroke, a combined oblique stroke and a combined turning stroke; the combined component comprises a horizontally-vertically cross combined component, an enclosed combined component, a point-horizontal stroke combined component, an oblique horizontal stroke-oblique vertical stroke combined component and a turning horizontal stroke-turning point combined component. The coding length of the Chinese character is of four codes, wherein the two front codes are an initial code and a final code, and the two back stroke codes are of the first stroke of the left part and the first stroke of the right part respectively for the Chinese characters with left-and-right structure, the first stroke of the upper part and the first stroke of the lower part respectively for the Chinese character with up-and-down structure and the two front strokes for other Chinese character. The initials or finals, which are easily confused, are arranged on the same keys, and similar initials or finals are orderly arranged on keys. The input method has the advantages of simple Chinese character separation rules, easy memory and low coincident code rate; thereby, the input method is applied to the Chinese character input of numeric keyboards on computers, mobile phones, cashiers and PDA.

The invention is suitable for the technical field of LED (light-emitting diode) packaging, and provides an LED packaging method. The LED packaging method is characterized by comprising the steps of etching a plurality of parallel first half etching grooves on the upper part of a metal etching sheet; respectively welding a positive electrode and a negative electrode of an LED flip chip to the two sides of the first half etching grooves; coating fluorescence glue for covering the LED flip chip on the metal etching sheet and solidifying the fluorescence glue; forming transparent silicon glue for covering the fluorescence glue on the metal etching sheet and solidifying the transparent silicon glue; etching second half etching grooves communicated with the first half etching grooves at the bottom of the metal etching sheet; cutting to form LEDs. The LED formed through such a packaging method adopts the metal etching sheet serving as the positive electrode and the negative electrode of the LED between the chip electrode and a welding electrode at the application end for transition, so that no difficulty is increased at the application end in use of the LED product, and the method is completely equal to the use method of an injection molding support.

The invention relates to a crankshaft processing technology of a vertical shaft general gasoline engine, which comprises the procedures of drilling a center hole; milling end faces; carrying out the rough turning on input and output ends; turning a curve neck; milling a flat keyway; quenching input and output end rods; carrying out double-station filleted quenching; carrying out the finish turning of input and output ends; grinding input and output end bearing stations and tooth stations; grinding the curve neck; milling a semicircular keyway; grinding an oil seal station; grinding input end conical surfaces; grinding flat key stations; grinding output end conical surfaces; and carrying out press mounting on a timing gear, wherein the procedure of polishing the oil seal station is further arranged in the front of the procedure of press mounting of the timing gear. The invention can ensure that crankshafts processed with the technology are assembled on a crankcase and can upwards spun engine oil infiltrating between an oil seal and the surface of a crankshaft oil seal station to the crankcase when the gasoline engine works, therefore, the engine oil is avoided from leaking outwards from the space between the oil seal and a crankshaft, and the quality of the vertical shaft general gasoline engine is enhanced.

The invention discloses a simplified multi-level converter space vector modulation method, and relates to the field of space vector modulation methods of multilevel converters, and is used solve problems that the redundant switch state is greatly increased along with the increase of the level number in the traditional SVM technology, and the SVM is difficult to realize due to the calculation of the redundant switch state and the selection of a proper switch state. The method comprises following steps: step 1: a vector expression is established; step 2: a reference vector track model is established; step 3: reference signals and level signals are respectively represented by coordinate components and corresponding component sum of reference vector and basic vector; step 4: a star-shaped connection multi-level converter is constructed; step 5: the sampling of the phase voltage reference vector track model of the star-shaped connection multi-level converter can be carried out, and the reference vector is acquired after synthesizing; step 6: equivalent base vector action time is calculated; step 7: the components of the equivalent basic vector of the star-shaped connection multilevel converter and the component sum are used as the switch state used for controlling the triangle-shaped connection multilevel converter line voltage.

The invention discloses a horticultural composite phase change pipe and a preparation method thereof; the prepared horticultural composite phase change pipe takes inorganic phase change material as the main material and is sealed in a polyethylene pipe; and the inorganic phase change material is prepared from the inorganic phase change material in percentage by mass: 8.8 to 10.6 percent of Na2SO4, 72 to 74 percent of Na2HPO4.12H2O, 1.5 to 3.5 percent of CaC12, 1 percent of Na2B4O7.10H2O, 0 to 1 percent of CMC and the balance water, and the sum of the percentage of the inorganic phase change material is 100 percent. The preparation method comprises the following steps that: the inorganic phase change material is prepared and mixed according to different phase change temperature and latent heat requirements; and then the mixed inorganic phase change main material is inorganically heated to the temperature which exceeds the phase change temperature, and then the material is changed into liquid state; the liquid material becomes saturated solution; liquid filling equipment seals the saturated solution with the polyethylene pipe; and when in sealing, the actual pipe diameter and the length of sealing is adjusted according to the bearing capability of different building walls and the required heat load, and the horticultural composite phase change pipe is prepared.

First, the method provides substrate. Cut line on the substrate divides the substrate into at least one chip. Being formed on the substrate, grooves are positioned on prearranged area, where weld pads are to be formed, or on the area between pads and the cut line. Low electrode is formed on sidewall of substrate, and in substrate of base. Dielectric layer of capacitance and up electrode are formed on the substrate. The up electrode is filled in the grooves. Then, being formed on the substrate, the doping area is connected to the low electrode electrically. Afterwards, first weld pad and second weld pad are formed on the substrate. Through the doping area, the low electrode is connected to the first weld pad electrically, and the up electrode is connected to the second weld pad electrically. Since capacitor is formed under pads, or on the substrate between pads and the cut line, the invention reduces area engaged by chip.

The invention relates to an X-ray multilayer film structure aiming at response of multiple working energy points. The structure comprises a KB objective lens, wherein the KB objective lens is coated with multiple film systems aiming at X-ray response at different energy points; the upper surface of a substrate of the KB objective lens is coated with a film system C, the upper surface of the film system C is coated with both a film system A and a film system B, and the film systems A and B are arranged front and back. Compared with the prior art, on the premise of not reducing the imaging performance of the system, the X-ray multilayer film structure aiming at response of multiple working energy points is used for realizing the responsiveness of X-ray at multiple working energy points, so that the structure can be applied to an ICF (inertial confinement fusion) physical experiment at different working energy points by using a same set of KB system. According to the structure provided by the invention, the difficulty and cost of designing and manufacturing multiple KB systems which respectively work at different energy points as well as the complexity level and time for adjusting the system on an ICF device are remarkably lowered.

The present invention provides a electrical connector for attenuating vibrations, in particular for the injector of a motor vehicle engine. The inventive connector comprises a locking device (13) for elastical interlocking which is provided with an axial stop surface (24) forming jointly with the associate stop surface of the complementary locking device (15) of a counterpart an mutual rest preventing the disconnection of the connector (1) and the counterpart (3). Said connector comprises an elastic vibration attenuating member (43) arranged in such a way that it produces the mutual elastic rest force of the stop surfaces (24, 65) when the connector (1) and the counterpart thereof are coupled. The invention can be used for connecting the injector of a motor vehicle internal combustion engine.

An adding method of organic carbon dissolved in ballast water relates to the field of ship. 0.20-1.23kg of grape sugar, 0.40-1.85kg of cane sugar and 20-33kg of sea mud are added in 250 tons of inflowing water with different salinity so that the DOC content in the inflowing water just reaches the specification of G8 guide rule, thereby ensuring that continental rise experiments can be carried out efficiently and also not increasing the difficulty of processing due to overhigh DOC content.