Supercharge Your Innovation With Domain-Expert AI Agents!

Preparation method of OLED panel polycrystalline silicon

A production method and technology of polysilicon, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as deterioration of TFT characteristics

Inactive Publication Date: 2011-02-16
SICHUAN CCO DISPLAY TECH
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During this process, the crystallization treatment of the active layer 41 will cause the volume change of the active layer 41 before and after crystallization, resulting in poor adhesion between the oxide interface and the silicon interface, resulting in poor TFT characteristics.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of OLED panel polycrystalline silicon
  • Preparation method of OLED panel polycrystalline silicon
  • Preparation method of OLED panel polycrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0042] To make complete as figure 1 The AMOLED structure shown requires the following steps in sequence:

[0043] (1) After the glass substrate 1 is cleaned, a silicon oxide (SiOx) buffer layer 2 is deposited thereon by plasma enhanced chemical vapor deposition (PECVD).

[0044] (2) Deposit 500 angstroms of amorphous silicon on the glass substrate 1 by low-pressure chemical vapor deposition (LPCVD) to form an amorphous silicon layer 41; the thickness of the amorphous silicon can be adjusted as required.

[0045] (3) Clean the glass substrate before photolithography, and evenly coat the photoresist layer 42 on the amorphous silicon layer 41. The thickness of the photoresist is 1.2 microns, forming such as figure 2 For the structure shown, the thickness of the photoresist can be adjusted as needed.

[0046] (4) photoresist is exposed and deve...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of OLED panel polycrystalline silicon. Before a gate insulation layer and a gate metal layer are prepared, the following steps are performed: (1) after a glass substrate is cleaned, the plasma enhanced chemical vapor deposition (PECVD) is adopted to deposit a SiOx buffer layer on the glass substrate; and (2) the low pressure chemical vapor deposition (LPCVD) is adopted to deposit a certain thickness of amorphous silicon layer on the glass substrate, etc. The beneficial effect of the invention is as follows: after the crystallization treatment of the active layer of the amorphous silicon material is completed, the subsequent gate insulation layer technology and gate layer technology are performed, thus when the subsequent technologies are performed, the active layer can not deform and the properties of the thin film transistor (TFT) can not be affected.

Description

technical field [0001] The invention belongs to the field of organic light-emitting diode (Organic Light-Emitting Diode, OLED) display technology, and in particular relates to a process technology of an active matrix organic light-emitting diode (Active Matrix / Organic Light-Emitting Diode, AMOLED) panel. Background technique [0002] When making an AMOLED panel, it is necessary to make a thin film field effect transistor (Thin Film Transistor, TFT) at each pixel of the AMOLED panel, and the different characteristics of the active layer of the TFT determine the different grades of the AMOLED panel. According to the different materials of the active layer when TFT is made, TFT can be divided into amorphous silicon TFT, polysilicon TFT, organic TFT and so on. Compared with amorphous silicon TFTs, polysilicon TFTs have tens to hundreds of times faster electron mobility, and have the advantage of being able to integrate driver ICs outside the AMOLED panel. While being able to mak...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/336H01L21/77
Inventor 李惠元徐正勋高昕伟
Owner SICHUAN CCO DISPLAY TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com