Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for inhibiting yellow smog during pickling of silicon materials

A technology of silicon acid, yellow color, applied in the direction of chemical instruments and methods, silicon compounds, inorganic chemistry, etc.

Inactive Publication Date: 2011-04-20
JIANGXI SAI WEI LDK SOLAR HI TECH CO LTD
View PDF3 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this method does not talk about how to deal with the problem of yellow smoke generated when silicon material reacts with the mixed acid of hydrofluoric acid and nitric acid

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1. A method for suppressing the generation of yellow smoke during pickling of silicon materials, wherein: the silicon materials to be washed are placed in a mixed solution composed of mixed acids and strong oxidants.

Embodiment 2

[0039] Embodiment 2. A method for suppressing the generation of yellow smoke during pickling of silicon materials, wherein: the chemical composition of the yellow smoke is nitrogen oxides, and the rest are the same as in Embodiment 1.

Embodiment 3

[0040] Embodiment 3. A method for suppressing the generation of yellow smoke during pickling of silicon materials, wherein: the nitrogen oxide is nitrogen dioxide gas, and the rest are the same as in Embodiment 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the fields of photovoltaic or semiconductors, in particular to a method for inhibiting yellow smog during pickling of silicon materials. The main chemical components of the yellow smog are nitrogen oxides, such as nitric oxide, nitrogen monoxide, nitrogen dioxide and nitrogen tetroxide gas. The invention adopts the technical scheme that silicon material to be pickled is put in a mixed solution of mixed acid and strong oxidizer, wherein the mixed acid comprises hydrofluoric acid and nitric acid, or other inorganic acids or organic acids, and the strong oxidizer is a standard oxidant of which the electrode potential is higher than that of the nitric acid and can be hydrogen peroxide, potassium permanganate, manganese dioxide or ozone. By adopting the technical scheme, the quality for cleaning the silicon material cannot be influenced while the yellow smog is inhibited.

Description

technical field [0001] The invention relates to the fields of photovoltaics or semiconductors, in particular to a method for suppressing the generation of yellow smoke during pickling of silicon materials. Background technique [0002] In the process of preparing solar-grade crystalline silicon, polycrystalline silicon is usually used as a raw material, and polycrystalline silicon is grown by directional solidification, or monocrystalline silicon is pulled by CZ pull method. During the processing of silicon wafers, many processes are required, such as: crystal growth, prescription, head and tail removal, slicing, cleaning and sorting and many other processes; in these processes, a lot of waste silicon materials will be generated, such as: ingot head Tails and scraps, pot bottoms, and some broken silicon wafers produced by machines or human factors during the process of slicing, cleaning and sorting. In addition, some debris will also be generated during battery processing. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B33/037C23F1/24
Inventor 章金兵付红平刘渝龙彭也庆
Owner JIANGXI SAI WEI LDK SOLAR HI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com