P-channel metal oxide semiconductor transistor source-drain injection method

Abstract

The invention discloses a p-channel metal oxide semiconductor transistor (PMOS) source-drain injection method, which comprises: performing low-concentration B ion injection in PMOS source and drain regions on a semiconductor substrate on two sides of the side wall of a PMOS grid structure; performing F ion injection in the PMOS source and drain regions on the semiconductor substrate on two sides of the side wall of the PMOS grid structure; performing high-concentration BF2 ion injection in the PMOS source and drain regions on the semiconductor substrate on two sides of the side wall of the PMOS grid structure; and performing high-concentration B ion injection in the PMOS source and drain regions on the semiconductor substrate on two sides of the side wall of the PMOS grid structure. The method weakens the short channel effect of the PMOS.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a source-drain injection method of a P-channel metal-oxide-semiconductor transistor (PMOS). Background technique [0002] In the existing complementary metal-oxide-semiconductor (CMOS) integrated circuit technology, after completing shallow trench isolation, ion implantation to form N well and P well, and completing the fabrication of gate oxide layer and polysilicon gate structure, source-drain area of ​​manufacturing. [0003] The manufacturing process of the existing PMOS source and drain regions mainly includes the following steps: [0004] Step 101: Etching the silicon nitride on the surface of the silicon wafer by using a dry etching process to form sidewalls of the gate structure of the PMOS. [0005] During the etching process, it is necessary to retain the silicon dioxide and silicon nitride surrounding the gate structure in order to form sidewalls,...

AI Technical Summary

Problems solved by technology

[0016] The dangling bonds in the gate oxide layer are often occupied by H ions. Since both Si ions and H ions in the gate oxide layer are positive ions, the covalent chemical bonds formed between them are weak. When electrons pass by, the chemical bonds It is likely to be interrupted and capture electrons, worsening NBTI, resulting in shorter NBTI life

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