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Quartz glass tube silicon chip bracket component

A quartz glass tube and silicon wafer technology, applied in electrical components, semiconductor devices, furnaces, etc., can solve problems such as low power consumption, small footprint, and inability to meet sintering process requirements.

Active Publication Date: 2013-10-30
EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If it shrinks, it cannot meet the requirements of sintering process
In addition, the high temperature resistant mesh belt needs to circulate around the inside and outside of the furnace during operation, and the mesh belt part is accompanied by the heating and cooling process of the silicon wafer. Therefore, during the operation, the mesh belt will carry a large amount of heat from the furnace. heat, and this part of heat will all be used as loss, which not only causes a lot of energy waste, but also increases the temperature of the working environment. Therefore, the applicant has developed a non-mesh belt silicon cell sintering furnace, which can be well To overcome the shortcomings of the existing mesh belt tunnel sintering furnace, this equipment has a small footprint, high thermal efficiency, low power consumption, and remarkable energy-saving effect

Method used

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  • Quartz glass tube silicon chip bracket component
  • Quartz glass tube silicon chip bracket component
  • Quartz glass tube silicon chip bracket component

Examples

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specific Embodiment approach

[0018] The quartz glass tube silicon wafer carrier components, such as Figure 2 to Figure 5 As shown, it consists of a quartz glass tube 411, a metal sleeve 412, a standoff 413 and a limit screw 414. The standoff 413 is fixed on the metal sleeve 412, and the metal sleeve 412 is provided with a threaded hole 416 and an opening 417. Both The center line of the center line is located on the same axis, and the limited holes 415 are opened equidistantly along the axial direction on the quartz glass tube 411, the metal sleeve 412 is set on the quartz glass tube 411, and the limit screw 414 is screwed into the screw thread on the metal sleeve 412 hole 416, and extend into the limit hole 415 on the quartz glass tube 411, so that the metal sleeve 412 is installed on the quartz glass tube 411 at equal intervals. Coating 418.

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Abstract

The invention provides a quartz glass tube silicon chip bracket component for a mesh belt-free silicon chip sintering furnace. The component comprises a quartz glass tube, metal sleeves, support legs and limiting screws, wherein the support legs are fixed on the metal sleeves; the metal sleeves are provided with threaded holes and are fixed on the quartz glass tube at equal intervals through the limiting screws; the support legs are made of steel wires; and the surfaces of the steel wires are coated with ceramic coatings. The quartz glass tube has the advantages of high intensity, high temperature resistance, low expansion coefficient, thermal shock resistance, acid resistance, chemical stability, high electrical insulating property, small heat absorption capacity and the like and is very suitable to be taken as a silicon chip bracket. The support legs are made of steel wires and the surfaces of the steel wires are coated with ceramic coatings, so that the requirements on intensity, high temperature resistance and wearing resistance of the support leg are met and metal ion pollution of a silicon chip caused by metal contact in a sintering process is reduced. Each metal sleeve is provided with an opening and a threaded hole, so that the metal sleeve is convenient to fix on the quartz glass tube.

Description

Technical field: [0001] The invention relates to a sintering furnace for silicon cells without a mesh belt, in particular to a silicon chip transmission device in the sintering furnace for silicon cells without a mesh belt. Background technique: [0002] At present, solar cell manufacturers at home and abroad mainly use sintering furnaces produced by European and American companies. The structure of this type of sintering furnace is a mesh-belt tunnel sintering furnace. area, sintering area and cooling area, arrange heating lamps with different densities in different areas to control the temperature of each area, and the silicon wafers with printed electrodes are transported through the mesh belt, and pass through different furnace temperature areas of the sintering furnace in turn to complete the pre-heating process. The electrode sintering process of thermal debinding, heating up, sintering and cooling down, although this kind of mesh belt tunnel sintering technology is re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): F27B9/30H01L31/18
CPCY02P70/50
Inventor 孙铁囤荀建华刘志刚高玉山潘盛姚伟忠陈琼
Owner EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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