Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof
A technology of heterojunction bipolar and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as reducing current lag time, achieve the effect of reducing parasitic capacitance and improving overall operating frequency
Active Publication Date: 2013-09-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
The presence of parasitic capacitances C1 and C2 will reduce the lag time for the current to flow from the outer base region 7a to the inner base region 7b, thereby limiting the increase of the maximum operating frequency of the silicon-germanium HBT.
Method used
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[0035] see figure 2 , which is an embodiment of the silicon-germanium HBT of the present invention. The silicon substrate 1 has a deep isolation layer 2 , a shallow isolation layer 3 , a buried layer 4 , a collector region 5 and a collector lead-out region 6 .
[0036] The silicon substrate 1 can also be divided into two parts, the silicon substrate under the buried layer 4 and the epitaxial layer above the buried layer 4, which has no influence on the present invention.
[0037] The manufacturing method of the deep isolation layer 2 and the shallow isolation layer 3 is usually: first open an isolation groove on the silicon wafer, then use an insulating material (such as silicon oxide, silicon nitride, silicon oxynitride, etc.) as a sidewall protection layer, and then perform Trench filling (generally polysilicon or the above-mentioned insulating materials, and special processes may also be used to form air gaps; if air gaps are used, polysilicon or the above-mentioned insul...
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The invention discloses a silicon-germanium HBT (heterojunction bipolar transistor) which comprises a T-shaped emitter, an inner base region and an outer base region, wherein the maximum value of the vertical distance between the upper surface of the T-shaped emitter and the upper surface of the inner base region is a, and the minimum value is b, the difference between a and b is c, and c is less than or equal to 5% of b or is less than or equal to 500; the outer base region comprises a silicon-germanium alloy layer and a polycrystalline silicon layer above the silicon-germanium alloy layer; and the inner base region comprises a silicon-germanium alloy layer. The invention also discloses a manufacturing method of the silicon-germanium HBT. In the silicon-germanium HBT and the manufacturing method thereof, the T-shaped emitter has extremely smooth upper surface; and the emitter can be made of polycrystalline silicon or high k metal materials, and is compatible with the CMOS (complementary metal oxide semiconductor) metal gate process. Besides, the invention reduces the diffusion of outer-base region impurities to the substrate, thereby reducing the parasitic capacitance and being beneficial to improving the overall working frequency of the device.
Description
technical field [0001] The invention relates to a semiconductor integrated circuit device, in particular to a silicon-germanium heterojunction bipolar transistor. Background technique [0002] A heterojunction bipolar transistor (HBT) consists of a wide bandgap emitter, a heavily doped base with a smaller bandgap, and a wide bandgap collector. For example, the emitter is made of silicon and the base is made of silicon. A silicon-germanium HBT composed of a germanium alloy (usually abbreviated as silicon-germanium) and a collector region made of silicon. The base band gap of silicon-germanium HBT is smaller than that of the emitter region, and it is fully compatible with silicon integrated circuit technology. It is suitable for manufacturing semiconductor devices with high integration, high speed, and high compatibility with silicon semiconductor manufacturing technology. It is widely used in high frequency field of high-speed communications. [0003] see figure 1 , which ...
Claims
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IPC IPC(8): H01L29/737H01L29/417H01L29/45H01L29/12H01L21/331H01L21/28
Inventor 王雷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP