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Current injection radio-frequency CMOS orthogonal upper frequency mixer taking parallel LC as load

A current injection and mixer technology, applied in the modulation and transformation of discharge tubes with at least two electrodes, to achieve the effects of reducing average noise current, reducing noise, and reducing flicker noise

Inactive Publication Date: 2011-04-27
EAST CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the actual application of the RF transmitter, a sufficiently high conversion gain of the up-mixer can greatly reduce the pressure on the power amplifier of the lower stage, but in the case of a large conversion gain, the linearity is usually sacrificed as a price

Method used

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  • Current injection radio-frequency CMOS orthogonal upper frequency mixer taking parallel LC as load
  • Current injection radio-frequency CMOS orthogonal upper frequency mixer taking parallel LC as load
  • Current injection radio-frequency CMOS orthogonal upper frequency mixer taking parallel LC as load

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Embodiment

[0015] This embodiment has the same figure 2 and image 3 The circuit shown is exactly the same circuit structure. The components and circuit parameters of this embodiment are as follows:

[0016] The capacitances of the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5, the sixth capacitor C6, the seventh capacitor C7, and the eighth capacitor C8 are respectively 352.564fF, 352.564fF, 997.816fF, 997.816fF, 3pF, 3pF, 20pF, 20pF.

[0017]The inductances of the first inductor L1 and the second inductor L2 are 1.84nH and 1.84nH respectively.

[0018] The resistances of the first resistor R1, the second resistor R2, the third resistor R3, and the fourth resistor R4 are 1.75764KΩ, 1.75764KΩ, 2.4KΩ, and 2.4KΩ, respectively.

[0019] The first MOS tube M1, the second MOS tube M2, the third MOS tube M3, the fourth MOS tube M4, the fifth MOS tube M5, the sixth MOS tube M6, the seventh MOS tube M7, the eighth MOS tu...

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Abstract

The invention discloses a current injection radio-frequency complementary metal oxide semiconductor transistor (CMOS) orthogonal upper frequency mixer taking parallel liquid crystal (LC) as a load. Based on the traditional double-balanced Gilbert frequency mixer, a current source consisting of a P-type metal oxide semiconductor (MOS) tube is connected at the drain of a trans-conductance level or the source of a switching tube by adopting a current injection mode and used for extracting the current supplied to the switching tube by the trans-conductance level so as to increase the radio-frequency bias current, increase the linearity and gain of a circuit and lighten the problem caused by voltage margin. The PMOS tube is used for current injection, so the current flowing through the vibration transistor is reduced, the output average noise current is reduced and the flicker noise of the frequency mixer is reduced. By adopting an inductor and a capacitor of parallel high-quality factors as loads, the upper frequency mixing function can be realized under low power supply voltage. The frequency mixer improves the linearity, increases the conversion gain and reduces the noise.

Description

technical field [0001] The present invention relates to the technical field of radio frequency integrated circuit design and signal processing, specifically a kind of working in 2.4-2.5GHz, with parallel LC as load current injection radio frequency complementary metal-oxide semiconductor (CMOS) quadrature up-mixer . Background technique [0002] In recent years, the continuous expansion of the personal communication and wireless mobile communication markets has promoted the development of wireless transceivers in the direction of low cost, low power consumption, high integration and miniaturization. Using CMOS technology to realize monolithic integration of RF system and baseband processing part is the current trend of RF circuit design, reducing the number of off-chip components, thereby reducing power consumption and cost, which is very important in wireless applications. In 1999, the Institute of Electrical and Electronics Engineers (IEEE) proposed the WLAN 802.11x stand...

Claims

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Application Information

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IPC IPC(8): H03D7/06
Inventor 徐倩龙蒋颖丹胡骁朱彤黄龙谢淼袁圣越李征蔡语昕张润曦赖宗声
Owner EAST CHINA NORMAL UNIVERSITY
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