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Use of chained implants in solar cells

A solar cell and substrate technology, applied in the field of ion implantation of solar cells, can solve problems such as cost constraints, difficulty in doping solar cells with solar cells, etc.

Inactive Publication Date: 2013-04-10
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Solar cell design is also limited by the difficulty of using different dopants and doping different parts of the solar cell
Cost of other additional doping steps limits commercial use of solar cells

Method used

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  • Use of chained implants in solar cells
  • Use of chained implants in solar cells
  • Use of chained implants in solar cells

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Experimental program
Comparison scheme
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Embodiment Construction

[0023] figure 1 A block diagram of a plasma doping system 100 that can provide ions to dope a selected material. figure 2 A block diagram of a beam-line ion implanter 200 that can provide ions to dope a selected material. Those skilled in the art should understand that the plasma doping system 100 and the beamline ion implanter 200 are each of different plasma doping systems and beamline ion implanters that can provide ions to dope a selected material. An example. This process can also be performed with other ion implantation systems, such as a non-mass analyzed flood implanter, other substrates or semiconductor wafer processing equipment; two or more of the above systems The combination.

[0024] Please refer to figure 1 The plasma doping system 100 includes a processing chamber 102 that defines an enclosed volume 103. A platform 134 can be placed in the processing chamber 102 to support a substrate 138. In an example, the substrate 138 may be a semiconductor substrate hav...

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PUM

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Abstract

The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.

Description

Technical field [0001] The present invention relates to ion implantation, in particular to ion implantation of solar cells. Background technique [0002] Ion implantation is a standard technique used to introduce conductivity-changing impurities into a semiconductor substrate. In the ion source, the required impurity materials are ionized. The ions are accelerated to form an ion beam having a specific energy, and the ion beam is guided to the surface of the substrate. The high-energy ions in the ion beam penetrate the main body of the semiconductor material and are embedded in the crystal lattice of the semiconductor material to form a region with desired conductivity. [0003] Solar cells are basically made by the same manufacturing process as other semiconductor components, and silicon is often used as the substrate material. The semiconductor solar cell is a simple element that has a built-in electric field and can separate charge carriers generated by the absorption of photo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265H01L31/042
CPCH01L21/266H01L21/26513H01L31/1804H01J2237/0827H01J2237/31711H01L31/068H01L31/18H01L31/0682H01J37/32412Y02E10/547H01J37/3171H01J2237/202Y02P70/50H01L21/26506
Inventor 尼可拉斯·P·T·贝特曼保罗·J·墨菲保罗·沙利文阿塔尔·古普塔
Owner VARIAN SEMICON EQUIP ASSOC INC