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Method for growing graphene on large-diameter 6H-SiC carbon surface

A graphene and 6h-sic technology, applied in the field of microelectronic materials, can solve the problems of difficulty in controlling the number of graphene layers and the difficulty of chemical mechanical polishing, etc., and achieve the effect of fewer layers, low cost and good uniformity

Active Publication Date: 2011-05-11
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But before growing graphene on the carbon surface, the carbon surface needs chemical mechanical polishing, but the chemical mechanical polishing of the carbon surface is more difficult than the silicon surface
In addition, the growth rate of graphene on the carbon surface is faster than that on the silicon surface, so the number of layers of graphene grown on the carbon surface is not easy to control
Therefore, so far, high-temperature growth of graphene on chemically mechanically polished 6H-SiC carbon surfaces has not been reported.

Method used

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  • Method for growing graphene on large-diameter 6H-SiC carbon surface
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  • Method for growing graphene on large-diameter 6H-SiC carbon surface

Examples

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Embodiment 1

[0038] A method for preparing graphene on a large-diameter 6H-SiC carbon surface, comprising the steps of:

[0039] 1) Polish and clean the carbon surface of a 6H-SiC wafer with a diameter of 3 inches, so that the surface roughness of the carbon surface is less than 0.3nm, and the flatness is less than 5μm, to obtain 6H-SiC with a thickness of 350μm and regular atomic steps on the surface. Among them, the carbon surface polishing of 6H-SiC wafer adopts chemical mechanical polishing method, and the steps are as follows:

[0040] Diamond micropowder (produced by Hengyuan Diamond Micropowder Factory, Zhecheng County, Henan Province) with a particle size of 2 μm, and oxidizing agent sodium hypochlorite and dispersant sodium silicate in a mass ratio of 1:0.1:0.03 are used to prepare a polishing solution with a pH of 5. The liquid has good fluidity, good suspension performance, non-toxicity, and is easy to clean; after the polishing liquid is prepared, it is placed in the polishing ...

Embodiment 2

[0044] A method for preparing graphene on a large-diameter 6H-SiC carbon surface, comprising the steps of:

[0045] 1) The carbon surface of the 6H-SiC wafer is polished and cleaned, as in Example 1.

[0046] 2) Place the processed 6H-SiC sample in the tray of the high temperature growth furnace crucible, with the carbon side facing up, and vacuumize to 1×10 -7 mbar, quickly increase the power to 1750°C, the heating rate is 80°C / min, pass high-purity argon (purity 99.999%), the flow rate is 10L / min, the pressure is controlled at 850mbar, and then slowly increase the power to heat up to 1950°C , the heating rate is 10° C. / min, and the growth of graphene is completed after 1 min of heat preservation. The number of graphene layers is 5-7 layers, and the graphene covers the entire surface of the substrate.

[0047] 3) Turn off the argon gas, pass the hydrogen gas at a large flow rate, the hydrogen gas flow rate is 5L / min, the pressure is controlled at 850mbar, and the temperatur...

Embodiment 3

[0049] A method for preparing graphene on a large-diameter 6H-SiC carbon surface, comprising the steps of:

[0050] 1) The carbon surface of the 6H-SiC wafer is polished and cleaned, as in Example 1.

[0051] 2) Put the processed 6H-SiC sample in the tray of the crucible of the high temperature growth furnace, and evacuate to 1×10 -7 mbar, quickly increase the power to heat up to 1730°C, the heating rate is 50°C / min, pass high-purity argon (purity is 99.999%), the flow rate is 8L / min, the pressure is controlled at 880mbar, and then slowly increase the power to heat up to 1900°C , the heating rate is 5° C. / min, and after 5 minutes of heat preservation, the growth of graphene is completed. The number of graphene layers is 3-6 layers, and the graphene covers the entire surface of the substrate.

[0052] 3) Turn off the argon gas, pass the hydrogen gas at a large flow rate, the hydrogen gas flow rate is 8L / min, the pressure is controlled at 880mbar, and the temperature is rapidl...

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Abstract

The invention relates to a method for growing graphene on a large-diameter 6H-SiC carbon surface, which comprises the following steps: polishing and cleaning a 6H-SiC wafer carbon surface; horizontally placing the upward carbon surface in a graphite tray in a single crystal growth furnace crucible; vacuumizing until the vacuum degree is 1*10<-7>mbar; quickly heating to 1700-1750 DEG C; introducing high-purity argon gas; then slowly heating to 1750-1950 DEG C; and insulating for 1-10 minutes, thereby finishing the growth of the graphene. By the method provided by the invention, a substrate does not have a damaged layer, the grown graphene is distributed on the whole surface of the substrate, and the number of layers of the graphene can be controlled at 1 to 10. The method is simple and easy to operate and can be used for preparing high-quality graphene.

Description

technical field [0001] The invention relates to a method for growing graphene on a large-diameter 6H-SiC carbon surface, belonging to the technical field of microelectronic materials. Background technique [0002] Graphene is a new carbonaceous material that is densely packed into a two-dimensional honeycomb lattice structure by a single layer of carbon atoms. It has excellent electrical, thermal and mechanical properties, and is expected to be used in high-performance nanoelectronic devices, composite materials, and field emission materials. , Gas sensors and energy storage and other fields have been widely used, and have great application prospects in industry, power industry and electronics industry. [0003] The thermal conductivity of graphene materials can reach up to 5000Wm at room temperature -1 K -1 . At room temperature, the Young's modulus is about 1.0TPa, and the stretching elasticity reaches 20%. It is currently the strongest material, and can be used to deve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B27/00C30B29/02
Inventor 陈秀芳魏汝省胡小波徐现刚
Owner SHANDONG UNIV
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