Sandwich anode structure of organic electroluminescent device and preparation method thereof

An electroluminescent device, anode structure technology, applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of low resistivity

Inactive Publication Date: 2011-05-11
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its transmittance to visible light is close to 90%, and its resistivity is also very low

Method used

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  • Sandwich anode structure of organic electroluminescent device and preparation method thereof

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Embodiment 1

[0018] 1) First, a transparent conductive indium tin oxide film 2 with a thickness of 10 nm is deposited on a transparent glass substrate 1 by sputtering, chemical vapor deposition, spray pyrolysis, sol-gel method or pulsed laser deposition method;

[0019] 2) Secondly, on the transparent conductive oxide film 2, a Pt film 3 with a thickness of 10 nm is evaporated by vacuum evaporation;

[0020] 3) Finally, on the metal film 3, a layer of molybdenum oxide (MoO x ) film 4.

Embodiment 2

[0022] 1) First, a layer of transparent conductive ZnO film 2 with a thickness of 300nm is deposited on a transparent glass substrate 1 by sputtering, chemical vapor deposition, spray pyrolysis, sol-gel method or pulsed laser deposition method;

[0023] 2) Secondly, on the transparent conductive oxide film 2, a layer of Au film 3 with a thickness of 50 nm is evaporated by vacuum evaporation;

[0024] 3) Finally, a layer of tungsten oxide (WO) with a thickness of 100 nm is evaporated on the metal film 3 by vacuum evaporation. 2 ) film 4.

Embodiment 3

[0026] 1) First, a transparent conductive AZO (Al:ZnO) film 2 with a thickness of 800 nm is deposited on a transparent glass substrate 1 by sputtering, chemical vapor deposition, spray pyrolysis, sol-gel method or pulsed laser deposition method;

[0027] 2) Secondly, on the transparent conductive oxide film 2, a Ag film 3 with a thickness of 80nm is evaporated by vacuum evaporation;

[0028] 3) at last, on the metal thin film 3, adopt the method vapor deposition of vacuum evaporation to be the vanadium pentoxide (V 2 o 5 ) film 4.

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Abstract

The invention provides a sandwich anode structure of an organic electroluminescent device and a preparation method. The preparation method comprises the following steps: firstly, a transparent conductive oxide film is deposited on a transparent glass substrate by adopting the methods of sputtering, chemical vapor deposition, spraying pyrolysis, sol-gel or pulsed laser deposition; secondly, a metallic film is deposited on the transparent conductive oxide film through vacuum evaporation; and eventually, metal oxide or a metal oxide / organic matter doped layer is deposited on the metallic film through vacuum evaporation. The novel anode structure provided by the invention is adopted to effectively improve the hole injection capability and improve the performance of an OLED (Organic Light Emitting Diode) device.

Description

technical field [0001] The invention relates to a sandwich anode structure of an organic electroluminescence device and a preparation method thereof. Background technique [0002] As the anode material of the OLED conductive layer, the prerequisites are: (1) good electrical conductivity; (2) good chemical and morphological stability; (3) the work function must match the HOMO energy level of the hole injection material . When used as an anode for down-emitting or transparent devices, another necessary condition is higher transparency in the visible region. The anode with the above characteristics can effectively improve the efficiency and lifespan of OLED devices. The most commonly used materials for anodes are transparent conductive oxides (TCO) and metals. Transparent conductive oxides include indium tin oxide (indium tin oxide, ITO), ZnO, AZO (Al:ZnO), etc., and conductive oxides are usually nearly transparent in the visible light region. Metals generally have high con...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/50H01L51/56
Inventor 张方辉丁磊梁田静张麦丽蒋谦阎洪刚
Owner SHAANXI UNIV OF SCI & TECH
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