Sandwich anode structure of organic electroluminescent device and preparation method thereof
An electroluminescent device, anode structure technology, applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of low resistivity
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Embodiment 1
[0018] 1) First, a transparent conductive indium tin oxide film 2 with a thickness of 10 nm is deposited on a transparent glass substrate 1 by sputtering, chemical vapor deposition, spray pyrolysis, sol-gel method or pulsed laser deposition method;
[0019] 2) Secondly, on the transparent conductive oxide film 2, a Pt film 3 with a thickness of 10 nm is evaporated by vacuum evaporation;
[0020] 3) Finally, on the metal film 3, a layer of molybdenum oxide (MoO x ) film 4.
Embodiment 2
[0022] 1) First, a layer of transparent conductive ZnO film 2 with a thickness of 300nm is deposited on a transparent glass substrate 1 by sputtering, chemical vapor deposition, spray pyrolysis, sol-gel method or pulsed laser deposition method;
[0023] 2) Secondly, on the transparent conductive oxide film 2, a layer of Au film 3 with a thickness of 50 nm is evaporated by vacuum evaporation;
[0024] 3) Finally, a layer of tungsten oxide (WO) with a thickness of 100 nm is evaporated on the metal film 3 by vacuum evaporation. 2 ) film 4.
Embodiment 3
[0026] 1) First, a transparent conductive AZO (Al:ZnO) film 2 with a thickness of 800 nm is deposited on a transparent glass substrate 1 by sputtering, chemical vapor deposition, spray pyrolysis, sol-gel method or pulsed laser deposition method;
[0027] 2) Secondly, on the transparent conductive oxide film 2, a Ag film 3 with a thickness of 80nm is evaporated by vacuum evaporation;
[0028] 3) at last, on the metal thin film 3, adopt the method vapor deposition of vacuum evaporation to be the vanadium pentoxide (V 2 o 5 ) film 4.
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