Manufacturing method of novel gallium nitride LED (light emitting diode) chip electrode structure

Abstract

The invention relates to a manufacture method of a novel gallium nitride LED (light emitting diode) chip electrode structure. The method comprises the following steps: taking a gallium nitride epitaxial wafer with a sapphire substrate, selectively etching according to the chip architecture to remove a P type layer 1 in the epitaxial layer and expose an N type epitaxial layer 3; forming an ITO (indium tin oxide) diffusion layer in ohmic contact with the P type layer, on the surface of the P type epitaxial layer 1 of the epitaxial wafer, punching a hole in the exposed N type epitaxial layer region; thinning the epitaxial wafer, so that the punched hole becomes a through hole 4 communicating the substrate surface with an N type region; coating a Cr layer on the surface of the epitaxial layer by vaporization through an vacuum coating technology firstly, then coating an Au layer by vaporization, forming a required weld line electrode 2 of the LED by photoetching and etching technologies; depositing an AL metal layer 5 on the surface of the thinned substrate, and forming a reflector of the LED chip; and splitting the epitaxial wafer to form LED chips which can be directly packaged and applied. The manufacture method in the invention is suitable for preparing high-power LED chips of a gallium nitride luminescent material.

Description

technical field [0001] The invention relates to a method for manufacturing an electrode structure of a GaN-based LED chip, belonging to the field of semiconductor LED chip manufacturing. Background technique [0002] The development of light-emitting diodes (LEDs) based on gallium nitride (GaN) materials is a major achievement in the progress of optoelectronic science and technology. GaN series LEDs are key light sources for the development of solid-state lighting and the realization of the human lighting revolution, and have broad application prospects. Conventional LEDs have low luminous power and cannot meet the requirements of LED lighting applications. To increase the luminous power, it is necessary to increase the brightness by increasing the current without changing the material. However, as the current flowing into the LED chip increases, the heat generated by the LED will increase sharply, resulting in changes and attenuation of the performance of the LED device. T...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for manufacturing a novel GaN-based LED chip electrode structure, through the improvement of the LED chip electrode structure, greatly improve the heat dissipation efficiency of the LED chip, and effectively solve the problems existing in the traditional GaN-based blue LED chip structure. Difficult heat dissipation, so that it can be applied to the production of high-power GaN-based LED chips under high-current working conditions

Images