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Method for preparing germanium quantum dot doped nano-titanium dioxide composite film

A nano-titanium dioxide, composite film technology, applied in ion implantation plating, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of easy agglomeration of quantum dots, low production efficiency, low film compactness, etc. the effect of reunion

Inactive Publication Date: 2012-06-27
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods have different shortcomings, such as: the prepared film is not dense, the adhesion is not strong, the process is complicated, the production efficiency is low, and the quantum dots are easy to agglomerate, etc.

Method used

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  • Method for preparing germanium quantum dot doped nano-titanium dioxide composite film

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0014] The equipment used in the implementation process of the present invention is the IBAD-600 multifunctional ion implantation and ion beam sputtering system.

[0015] Soak a 2cm×2cm square quartz substrate in acetone solution for 15 minutes, then ultrasonically clean it with absolute ethanol for 10 minutes, and finally wash it with a large amount of deionized water; 99.99% germanium target surface wipe clean. Then fix the cleaned quartz substrate and titanium dioxide and germanium targets on the substrate and target positions in the sputtering vacuum chamber respectively, and vacuumize to make the background vacuum degree reach 8×10 -4 Pa, and then pass into the sputtering chamber argon gas with a purity of 99.99%, so that the pressure in the sputtering chamber is 2.0×10 -2 Pa, adjust the temperature in the sputtering chamber to 25°C. Before sputtering the film, the target and the substrate were pre-sputtered and cleaned for 5-10 minutes by using an argon ion beam with a...

example 2

[0017] The cleaning process of the required quartz substrate and target material during the preparation of the nanocomposite film is the same as in Example 1.

[0018] Fix the cleaned quartz substrate and target on the substrate and target in the sputtering vacuum chamber respectively, and evacuate to make the background vacuum degree reach 6.0×10 -4 Pa, and then pass into the sputtering chamber argon gas with a purity of 99.99%, so that the pressure in the sputtering chamber is 2.5×10 -2 Pa, adjust the temperature in the sputtering chamber to 100°C. The pre-sputtering cleaning process of the quartz substrate and target is the same as in Example 1. Firstly, an argon ion beam with an extraction current of 20 mA and an extraction voltage of 0.7 kV is used to bombard the titanium dioxide target for 20 minutes to deposit a layer of TiO on the substrate by sputtering. 2 Thin film, then bombard the germanium target under the same conditions for 10min, and sputter deposit a layer o...

example 3

[0020] The cleaning process of the required quartz substrate and target material during the preparation of the nanocomposite film is the same as in Example 1.

[0021] Fix the cleaned quartz substrate and target on the substrate and target in the sputtering vacuum chamber respectively, and evacuate to make the background vacuum degree reach 8.0×10 -4 Pa, and then pass into the sputtering chamber argon gas with a purity of 99.99%, so that the pressure in the sputtering chamber is 2.0×10 -2 Pa, adjust the temperature in the sputtering chamber to 200°C. The pre-sputtering cleaning process of the quartz substrate and target is the same as in Example 1. Firstly, an argon ion beam with an extraction current of 30mA and an extraction voltage of 1.0kV is used to bombard the titanium dioxide target for 20 minutes to deposit a layer of TiO on the substrate by sputtering. 2 Thin film, then bombard the germanium target for 6min under the same conditions, and sputter deposit a layer of G...

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Abstract

The invention relates to a method for preparing a germanium quantum dot doped nano-titanium dioxide composite film through ion beam sputtering. The method comprises the following steps of: cleaning a substrate and a target, placing the substrate and the target into a sputtering chamber, and performing pre-sputtering cleaning on the substrate and the target under vacuum and under protection of argon; performing alternate sputtering on titanium dioxide and the germanium target by argon ion beams with certain projected current and voltage to deposit a titanium dioxide film and a germanium film on the substrate to obtain a germanium-doped nano-titanium dioxide composite film in which the titanium dioxide film is taken as a covering layer; and annealing to obtain the germanium quantum dot doped nano-titanium dioxide composite film. The invention has the advantages that: the method is simple, conditions are mild, the content, scale, morphology and distribution of germanium quantum dots can be freely adjusted in the process, and the disadvantage that the quantum dots are easy to aggregate when prepared by a solution method is overcome so as to adjust the optical absorption characteristics of doped titanium dioxide films.

Description

technical field [0001] The invention relates to a method for preparing a germanium quantum dot-doped nano-titanium dioxide composite film by ion beam sputtering, which belongs to the germanium and titanium dioxide composite film technology. Background technique [0002] Titanium dioxide (TiO 2 ) is an n-type semiconductor material, which has the advantages of strong oxidation ability, non-toxicity, good photostability and low cost. It has some special properties in terms of light, electricity and catalytic properties. be more and more widely used. But TiO 2 The forbidden band width is 3.0-3.2eV, and it can only absorb ultraviolet light with a wavelength of less than 400nm, and the utilization efficiency of photogenerated carriers is low, and the photoelectric conversion efficiency is low, which limits its application in photoelectric conversion. Currently raising TiO 2 An effective method to improve the photoelectric conversion efficiency is to dope or sensitize it with ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/34H01L31/032H01L31/18
CPCY02P70/50
Inventor 何芳李小青黄远万怡灶刘贵高
Owner TIANJIN UNIV
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