Preparation method of silicon quantum dot doped nano titanium dioxide film composite material

A nano-titanium dioxide and thin-film composite material technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of not forming silicon quantum dots, and achieve the effect of overcoming easy agglomeration

Active Publication Date: 2013-03-06
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, so far, many people have doped silicon in titanium dioxide nanofilms because they have not found a suitable process and have not formed silicon quantum dots.

Method used

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  • Preparation method of silicon quantum dot doped nano titanium dioxide film composite material

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Comparison scheme
Effect test

example 1

[0016] The equipment used in the film preparation process of the present invention is the IBAD-600 multifunctional ion implantation and ion beam sputtering system;

[0017] The equipment used in the ion implantation preparation process is FM2000 nanometer multi-layer film composite machine.

[0018] The process of preparing nano-titanium dioxide film composite material doped with silicon quantum dots is as follows: soak a 2cm×2cm square quartz substrate in acetone solution and clean it for 15 minutes, then ultrasonically clean it with absolute ethanol for 10 minutes, and finally clean it with a large amount of deionized water; The surface of the titanium dioxide target material (10cm×10cm) with a mass purity of 99.99% was wiped clean with absolute ethanol. Then the cleaned quartz substrate and titanium dioxide were respectively fixed on the substrate and the target in the sputtering vacuum chamber, and vacuumed to make the background vacuum degree reach 8×10 -4 Pa, and then p...

example 2

[0020] The preparation process of the titanium dioxide film required for preparing the nano-titanium dioxide film composite material doped with silicon quantum dots is the same as that of Example 1.

[0021] Using ion implantation equipment, vacuumize to make the background vacuum degree reach 8.0×10 -4 Pa, when injecting, the environmental protection gas is high-purity argon, and the working vacuum is 2.0×10 -2 Pa, the substrate temperature is 25°C; then, the prepared titanium dioxide thin film is first implanted with an implant energy of 70keV and an implant dose of 1×10 16 cm -2 Perform silicon ion implantation for the first time, so that the implanted silicon ions are concentrated at the bottom of the titanium dioxide film; then the implantation energy is 50keV, and the implantation dose is 1×10 16 cm -2 Carry out the second ion implantation, so that the implanted silicon ions are concentrated in the middle; finally, at 30keV, the implantation dose is 1×10 16 cm -2 Th...

example 3

[0023] The preparation process of the titanium dioxide film required for preparing the nano-titanium dioxide film composite material doped with silicon quantum dots is the same as that of Example 1.

[0024] Using ion implantation equipment, vacuumize to make the background vacuum degree reach 9.0×10 -4 Pa, when injecting, the environmental protection gas is high-purity argon, and the working vacuum is 1.0×10 -2 Pa, the substrate temperature is 200°C; then, the prepared TiO2 thin film is first implanted with an implant energy of 60keV and an implant dose of 3×10 17 cm -2 Perform silicon ion implantation for the first time, so that the implanted silicon ions are concentrated at the bottom of the titanium dioxide film; then the implantation energy is 40keV, and the implantation dose is 3×10 17 cm -2 Perform the second ion implantation, so that the implanted silicon ions are concentrated in the middle; finally at 30keV, the implantation dose is 3×10 17 cm -2The third silicon...

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Abstract

The invention discloses a method for preparing silicon quantum dots in nano titanium dioxide under the assistance of ion implantation and ion bean sputtering. The method comprises the following steps: washing a substrate and a target material and then placing in a sputtering chamber; carrying out pre-sputtering and washing in vacuum under the protective condition of argon; sputtering titanium dioxide with an argon ion beam with certain projected current and voltage, and thus depositing a titanium dioxide film on the substrate; annealing so as to obtain a nano titanium dioxide film; carrying out silicon ion implantation three times at certain energy and implantation dosage so as to obtain silicon doped titanium dioxide film; and annealing so as to obtain the silicon quantum dot doped nano titanium dioxide film. The method has the advantages that method is simple, and conditions are mild; the content, size, morphology and distribution of the silicon quantum dots can be freely regulated through regulating an ion implantation process; and the defect that the quantum dots are easy to agglomerate when in implantation is overcome, thereby regulating the light absorbing characteristic of the doped titanium dioxide film.

Description

technical field [0001] The invention relates to a method for preparing silicon quantum dot-doped nano-titanium dioxide film composite material, in particular to a method for preparing silicon quantum dots in a titanium dioxide film assisted by ion implantation and ion beam sputtering, and belongs to the technical field of photoelectricity and photocatalysis. Background technique [0002] Titanium dioxide (TiO 2 ) has the advantages of good light stability, strong oxidation ability, pollution-free and cheap, and has some special properties in photoelectricity and catalysis. However, its band gap is 3.0-3.2eV, and it can only absorb ultraviolet light with a wavelength of less than 400nm, and the utilization efficiency of photogenerated carriers is low, so the photoelectric conversion efficiency is low, which limits its application in photoelectric conversion. Currently raising TiO 2 An effective method to improve the photoelectric conversion efficiency is to dope or sensitiz...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/48C23C14/34C23C14/08
Inventor 何芳李小青黄远刘贵高王玉林
Owner TIANJIN UNIV
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