Method for preparing thin film from ternary compound semiconductor material Si1-X-YCXNY
A ternary compound, si1-x-ycxny technology, applied in the field of chemistry, can solve the problems of insufficient stability of the hot wire, small uniform thermal field area, etc., and achieve the effects of convenient operation, simple experimental device and high quality
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[0030] Semiconductor material Si of the present invention 1-X-Y C X N Y The preparation method of the ternary compound thin film adopts the improved hot wire chemical vapor deposition equipment to prepare Si on the single crystal silicon wafer or quartz wafer substrate. 1-X-Y C X N Y film. Specifically include the following steps:
[0031] 1. Clean the hot wire and install it in a vacuum chamber for carbonization;
[0032] Specifically include: put the hot wire in 10% NaOH solution and boil for 5 hours to remove surface impurities, take it out and clean it and put it into a vacuum chamber; adjust the pressure of the vacuum chamber to 4.0×10 3Pa, heat the hot wire to 2300~2400°C, and pass CH with a flow rate of 25SCCM 4 , carbonization treatment for 14 hours, so that a layer of stable tungsten and carbon compounds are formed on the surface of the substrate, so as to reduce the deformation of the hot wire at high temperature, and at the same time prevent the volatilizatio...
Embodiment 1
[0042] Such as image 3 As shown, the preparation process of this embodiment is as follows: after boiling in 10% NaOH solution for about 5 hours, a tungsten (W) wire with a length of 120 mm and a diameter of 1.2 mm is used as the heating wire. figure 1 The four comb-like structure heating wires shown in parallel can obtain a uniform thermal field with an area of about 80mm×100mm. Each hot wire is connected to each end such as figure 2 For the sub-use electrode shown, the other end of the sub-use electrode is connected to a soft wire, and the electrode is placed on an insulating, high-temperature-resistant ceramic support so that it is not fixed. Install the hot wire in the vacuum chamber and adjust the pressure of the vacuum chamber to 4.0×10 3 Pa, heat the hot wire to 2350°C, and feed CH with a flow rate of 25SCCM 4 , carbonization treatment for 14 hours. In the same experiment, two double-sided polished single-crystal silicon wafers and quartz wafers were selected as...
Embodiment 2
[0045] The technological process of this embodiment is the same as that of Embodiment 1, the difference is that the N 2 Flow is 2.0 SCCM. FIG. 8 is the Auger electron spectrum of the film sample prepared in Example 2. In the figure (a) is the surface full-energy spectrum analysis of the sample, (b) is the full-energy spectrum analysis of the sputtering stripped for about 2 minutes, and (c) is the Auger electron spectrum depth profile of the sample. From Figure 8(b), the content of elements Si, C, N, and O in the sample after 2 minutes of sputtering can be calculated according to the formula: Silicon content C Si =38.6%; carbon content C C =45.6%; nitrogen content C N =15.8%; oxygen content C O =0.0%; the results show that: ①The contents of Si, C, and N in the sample are higher than those on the surface, which is mainly due to the influence of O element on the surface; ②There is no O element in the film layer, which proves that the O element is due to the The surface is...
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Abstract
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