Organic light-emitting diode device
An electroluminescent device and luminescent technology, applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems of insufficient electron mobility and affecting the life of OLEDs, achieve simplified structure and preparation process, and improve current carrying Effect of sub-matching degree, high electron mobility
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Embodiment 1
[0051] Device structure: ITO / NPB(40nm) / Alq 3 (50nm) / C5:CsCO 3 (20nm, 10%) / Al(150nm)
[0052] Take the ITO conductive glass substrate with a specific pattern etched as the substrate. The substrate is ultrasonically cleaned in deionized water containing a cleaning solution. The temperature of the cleaning solution is about 60℃, and then the cleaned substrate is washed with an infrared baking lamp. Bake and dry, put it into the evaporation chamber to sequentially evaporate the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, the electron injection layer, and the cathode structure. The chamber pressure during the evaporation process is lower than 5.0×10- 3Pa.
[0053] In this embodiment, the first 40nm N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) on the ITO anode is used as a hole Transmission layer; continue to evaporate 50nm thick aluminum quinolate (Alq 3 ) As the light-emitting layer; a 20nm electron in...
Embodiment 2
[0055] Device structure: ITO / NPB(40nm) / Alq 3 (50nm) / C8:CsF(20nm, 10%) / Al(150nm)
[0056] The device with the above structure was prepared according to the method of Example 1, except that the C8-doped 10% by weight CsF in the compound of the present invention was used as the electron injection and transport function layer of the device.
Embodiment 3
[0058] Device structure: ITO / NPB(40nm) / Alq 3 (50nm) / C20:KBH(20nm, 10%) / Al(150nm)
[0059] The device with the above structure was prepared according to the method of Example 1, except that KBH doped with 10% by weight in C20 was used as the electron injection and transport function layer of the device.
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