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Drive control system and method for parallel insulated gate bipolar transistors (IGBT)

A technology of driving control and driving method, which is applied in the direction of output power conversion device, electrical components, AC power input conversion to DC power output, etc. It can solve the problems of large loss of parallel IGBTs and unbalanced current, so as to reduce heat dissipation costs, The effect of improving performance and optimizing performance

Inactive Publication Date: 2011-05-25
深圳飞能能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to propose a new parallel IGBT drive control system and method for the defects of large loss and unbalanced current in the parallel IGBT in the prior art

Method used

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  • Drive control system and method for parallel insulated gate bipolar transistors (IGBT)
  • Drive control system and method for parallel insulated gate bipolar transistors (IGBT)
  • Drive control system and method for parallel insulated gate bipolar transistors (IGBT)

Examples

Experimental program
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Effect test

Embodiment 1

[0045] The model of single-phase half-bridge inverter power supply is as follows:figure 1 As shown, the drive control system in this embodiment is used to realize the parallel drive of two IGBTs in the single-phase half-bridge inverter power supply (M=2), and the drive control system figure 2 As shown, it specifically includes: a DSP processing unit and an FPGA / CPLD processing chip; the DSP processing unit includes a PID controller / PI controller and a PWM functional module unit connected to each other; the PID controller / PI controller is used for feedback to the IGBT The signal is dynamically adjusted; the PWM functional module unit is used to modulate the modulated signal and output it; the FPGA / CPLD processing chip is used to divide each dynamic modulated signal into two for output.

[0046] Its working process is: after dynamic adjustment by PID control / PI control in the DSP processing unit, the PWM functional module unit outputs a pair of complementary PWM modulation signa...

Embodiment 2

[0050] The model of the three-phase half-bridge inverter power supply is as follows: Figure 5 As shown, the drive control system in this embodiment is used to realize the drive of two parallel IGBTs (M=2) in the three-phase half-bridge inverter power supply, and the drive control system Figure 6 As shown, its working process is specific: after the PID adjustment / PI adjustment in the DSP processing unit adjusts the feedback signal, the PWM functional module unit generates three pairs of SPWM signals according to the SPWM modulation scheme, and inputs them to the corresponding I of the FPGA / CPLD processing chip. / O port; according to the frequency division method in embodiment one (the specific scheme can refer to as image 3 shown), yielding Figure 7 The 12 signals shown are used to drive Figure 5 in the corresponding IGBT.

[0051] in the attached Figure 5 In the three-phase half-bridge inverter power supply model in , for the A-phase power supply circuit: the Q1 sign...

Embodiment 3

[0053] The model of three-phase full-bridge inverter power supply is as follows: Figure 8 As shown, the drive control system in this embodiment is used to realize the drive of two IGBTs connected in parallel (M=2) in the three-phase full-bridge inverter power supply, and the drive control system Figure 9 As shown, the system adopts a combination of digital and analog, and its working process is as follows: the DSP processing unit generates three pulse wave signals, which are adjusted and processed by the corresponding analog circuit to generate three dynamic sinusoidal signals, and then modulated Based on this, the signal modulates a pair of complementary triangular modulation waves to generate 6 pairs of SPWM signals, (such as Figure 10 Shown) input to the corresponding I / O mouth of FPGA / CPLD processing chip; According to the frequency division method in the embodiment one (concrete scheme can refer to as image 3 Shown), to generate 24 signals (due to space issues, Fig...

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PUM

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Abstract

The invention discloses a drive control system and a drive control method for parallel insulated gate bipolar transistors (IGBT), which are applied to a parallel inverted power supply. The system comprises a signal output unit and a signal processing unit, wherein the input end of the signal output unit is connected with each IGBT in the parallel inverted power supply, and the output end of the signal output unit is connected with the signal processing unit; the signal output unit is used for receiving a feedback signal, performing modulation processing and outputting dynamic N pairs of complementary modulation signals; and the signal processing unit is connected with driver boards of each IGBT in the parallel inverted power supply, and is used for receiving the N pairs of modulation signals, dividing each path of modulation signals into M signals with the same frequency and outputting the signals. M parallel IGBTs work alternately, so the system and the method reduce the switching frequency of each IGBT by 1 / M to further reduce the loss of the IGBT, and simultaneously avoid the current unbalance of the M parallel IGBTs as well as the adverse effects of the current unbalance on the reliability and stability of the power supply.

Description

technical field [0001] The invention relates to the field of parallel inverter power supplies, in particular to a drive control system and method for parallel IGBTs. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. With the development of IGBT high-voltage technology, more and more industries use IGBTs as switching elements in power supplies. [0003] At present, the switching frequency of IGBT is up to 20KHz, but the modulation wave required in some specific power supplies such as aviation power supplies, frequency converters, and flywheel control power supplies is 400Hz or even higher. The switching frequency requirements of the IGBT are also getting higher and higher...

Claims

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Application Information

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IPC IPC(8): H02M1/08H02M7/537
Inventor 刘在献李方党彦波
Owner 深圳飞能能源有限公司