Protective film composition for wafer dicing

A technology of protective film and composition, applied in the direction of adhesive type, N-vinylpyrrolidone copolymer adhesive, electrical components, etc. Generation of pyrolyzed cross-linked substances, effect of high adhesion

Active Publication Date: 2011-05-25
DONGWOO FINE CHEM CO LTD
View PDF1 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When a wafer is cut with a blade, in the case where the wafer protective film has a high hardness, the protective film may be cracked, so that impurities generated during wafer dicin

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

example 1～10 and comparative example 1～6

[0040] Examples 1-10 and Comparative Examples 1-6: Preparation of protective film composition for wafer dicing

example 1

[0042] In a mixer equipped with a stirrer, add 5g of polyethyloxazoline (Aquazol, degree of polymerization (DP): 50) and 5g of polyvinyl alcohol (PVA) (DP: 500, degree of saponification (DS): 87 -90%), and water was added as a solvent so that the viscosity of the solution was 60 cP, after which stirring was performed at room temperature and 500 rpm for 1 hour, thereby preparing a protective film composition for wafer dicing.

example 2

[0044] In a mixer equipped with a stirrer, add 3g of polyethyloxazoline (Aquazol, DP: 50), 3g of polyvinylpyrrolidone (DP: 1200) and 4g of PVA (DP: 1700, DS: 87-90 %), and water was added as a solvent so that the viscosity of the solution was 60 cP, after which stirring was performed at room temperature and 500 rpm for 1 hour, thereby preparing a protective film composition for wafer dicing.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Viscosityaaaaaaaaaa
Login to view more

Abstract

Disclosed is a protective film composition for wafer dicing, comprising at least one resin selected from the group consisting of polyethyloxazoline and polyvinylpyrrolidone, at least one component selected from the group consisting of a water-soluble resin and an alcoholic monomer, and a solvent, such as water or a mixture of water and an organic solvent.

Description

technical field [0001] The invention relates to a protective film composition with excellent thermal stability, which is applied to a semiconductor cutting process. Background technique [0002] In the manufacture of semiconductor devices, a wafer dicing process follows a semiconductor lamination process in order to separate a plurality of devices respectively arranged by dicing the wafer along boundary regions between the devices called streets. After the dicing process, a chip processing process is performed, thereby completing a semiconductor product. [0003] As the integration of semiconductor devices increases, the width of the track becomes narrower, and the mechanical properties of the laminate become worse. Therefore, it is necessary to change the wafer dicing process to solve the above-mentioned problems. [0004] As the degree of integration of devices increases, polyimide, a main substance in an insulating film at an uppermost position of a laminate, may be dam...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/304C09J139/06
CPCC08L39/06H01L21/6836C08L33/08H01L2221/68327C08L37/00
Inventor 李京浩权基真成始震
Owner DONGWOO FINE CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap