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Polishing composition and polishing method using the same

A polishing composition, linear technology, applied in the direction of polishing composition containing abrasive, chemical instrument and method, record carrier manufacturing, etc., can solve unsatisfactory problems, etc.

Inactive Publication Date: 2011-06-22
FUJIMI INCORPORATED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these conventional polishing compositions are unsatisfactory for fully satisfying all the above requirements and still have room for improvement

Method used

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  • Polishing composition and polishing method using the same
  • Polishing composition and polishing method using the same
  • Polishing composition and polishing method using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 15 and comparative example 1 to 18

[0050] In Examples 1 to 15, the acid and colloidal silica were mixed with water, and optionally with a water-soluble polymer, to prepare polishing compositions. In Comparative Examples 1 to 18, an acid, colloidal silica, and a water-soluble polymer were mixed with water in appropriate proportions to prepare polishing compositions. The detailed information of the acid, colloidal silica, and water-soluble polymer in the polishing composition of each Example and Comparative Example and the results of measuring the pH value of the polishing composition of each Example and Comparative Example are shown in the table 1 and Table 2.

[0051] In the column titled "Acid Type and Concentration" of Tables 1 and 2,

[0052] A1 represents isethionic acid;

[0053] A2 represents sulfopropionic acid;

[0054] A3 represents sulfopropanediol;

[0055] A4 represents benzenesulfonic acid;

[0056] A5 represents ethanedisulfonic acid;

[0057] A6 represents sulfuric acid;

[0058] A7 repres...

Embodiment 21 to 24 and comparative example 21 to 24

[0092] In Examples 21 to 24, an acid and colloidal silica were mixed with water, optionally together with a pH adjuster, to prepare a polishing composition. In Comparative Examples 21 to 24, colloidal silica was mixed with water, and optionally with a pH adjuster, to prepare polishing compositions. Table 4 shows details of the acid, colloidal silica, and pH adjuster in the polishing compositions of Examples and Comparative Examples, and the measurement results of the pH of the polishing compositions of Examples and Comparative Examples.

[0093] In Table 4, A1 in the column titled "Type and Concentration of Acid" represents isethionic acid; B4 in the column titled "Type and Concentration of Colloidal Silica" represents those having an average primary particle size of 35 nm and colloidal silica with an average secondary particle diameter of 66 nm; and, C1 in the column named "pH adjuster" represents nitric acid, and C2 in the column named "pH adjuster" represents ammonia.

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Abstract

Disclosed is a polishing composition containing an acid expressed as R2-R1-SO3H (wherein R1 represents a linear alkylene or hydroxyalkylene group having 1-4 carbon atoms, and R2 represents a hydroxy group, a carboxy group or a sulfonic acid group when R1 is a linear alkylene group, but represents a carboxy group or a hydroxymethyl group when R1 is a linear hydroxyalkylene group) or C6H5-R3 (wherein R3 represents a sulfonic acid group or a phosphonic acid group), and abrasive grains. The acid contained in the polishing composition is preferably isethionic acid or benzenesulfonic acid. The polishing composition is mainly used for the purpose of polishing silicon oxide materials including low-dielectric-constant films such as glass substrates for hard disks, synthetic quartz substrates for photomasks, silicon dioxide films of semiconductor devices, BPSG films, PSG films, FSG films and organic siloxane films.

Description

technical field [0001] The present invention relates to a use primarily for polishing silicon oxide materials, more particularly for glass substrates for hard disks, synthetic quartz substrates for photomasks, or low dielectric constant films (e.g., for semiconductor devices) Polishing for the purpose of polishing silicon dioxide film, boron-phosphorus doped silicon glass (BPSG) film, phosphosilicate glass (PSG) film, fluorosilicate glass (FSG) film, and organosiloxane film) combination. The present invention also relates to a polishing method using the above composition. Background technique [0002] In order to improve the quality of the silicon oxide material after polishing, it is strongly required to reduce the surface roughness and surface defects (such as silicon oxide) of the silicon oxide material after polishing by polishing the polishing composition for polishing the silicon oxide material. number of scratches on the object material). In addition, in order to s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00C09K3/14G11B5/84B24B37/04
CPCC09K3/1463G11B5/8404C09G1/02C03C19/00B24B37/044
Inventor 大津平大桥圭吾
Owner FUJIMI INCORPORATED
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